Minimal disturbed bits in writing resistive crossbar memories

Mohammed E. Fouda; Ahmed M. Eltawil; Fadi Kurdahi

doi:10.1145/3232195.3232207

Minimal disturbed bits in writing resistive crossbar memories

Mohammed E. Fouda, Ahmed M. Eltawil, Fadi Kurdahi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.

Original language	English (US)
Title of host publication	Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2018
Publisher	Association for Computing Machinery, Incacmhelp@acm.org
ISBN (Print)	9781450358156
DOIs	https://doi.org/10.1145/3232195.3232207
State	Published - Jul 17 2018
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2019-11-20

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title = "Minimal disturbed bits in writing resistive crossbar memories",

abstract = "Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.",

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Minimal disturbed bits in writing resistive crossbar memories. / Fouda, Mohammed E.; Eltawil, Ahmed M.; Kurdahi, Fadi.
Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2018. Association for Computing Machinery, Incacmhelp@acm.org, 2018.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Minimal disturbed bits in writing resistive crossbar memories

AU - Fouda, Mohammed E.

AU - Eltawil, Ahmed M.

AU - Kurdahi, Fadi

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PY - 2018/7/17

Y1 - 2018/7/17

N2 - Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.

AB - Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.

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DO - 10.1145/3232195.3232207

M3 - Conference contribution

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BT - Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2018

PB - Association for Computing Machinery, Incacmhelp@acm.org

ER -

Minimal disturbed bits in writing resistive crossbar memories

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