TY - GEN
T1 - Minimal disturbed bits in writing resistive crossbar memories
AU - Fouda, Mohammed E.
AU - Eltawil, Ahmed M.
AU - Kurdahi, Fadi
N1 - Generated from Scopus record by KAUST IRTS on 2019-11-20
PY - 2018/7/17
Y1 - 2018/7/17
N2 - Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.
AB - Resistive memories are promising candidates for non-volatile memories. Write disturb is one of problems that facing this kind of memories. In this paper, the write disturb problem is mathematically formulated in terms of the bias parameters and optimized analytically. A closed form solution for the optimal bias parameters is calculated. Results are compared with the 1/2 and 1/3 bias schemes showing a significant improvement.
UR - http://dl.acm.org/citation.cfm?doid=3232195.3232207
UR - http://www.scopus.com/inward/record.url?scp=85060715191&partnerID=8YFLogxK
U2 - 10.1145/3232195.3232207
DO - 10.1145/3232195.3232207
M3 - Conference contribution
SN - 9781450358156
BT - Proceedings of the 14th IEEE/ACM International Symposium on Nanoscale Architectures, NANOARCH 2018
PB - Association for Computing Machinery, [email protected]
ER -