Abstract
This work highlights the application of a junctionless (JL) transistor with charge trapping mechanism as an artificial synaptic device for neuromorphic computing. In this work, synapse behaviors ((short-term potentiation (STP), long-term potentiation (LTP), and depression (LTD))) have been validated and analyzed by storing the positive charges (holes) in the floating body and charge trapping nitride layer. JL device can be operated at a lower drain voltage (VDS = 0.8 V) to trigger the band-to-band tunneling and impact ionization mechanisms. The device achieves a higher and linear conductance value, and the non-linearity value for LTP is 0.1, which is beneficial for neural networks. Estimated conductance values from the device are utilized to estimate the pattern recognition and achieve an accuracy of 85 % with the CNN algorithm and CIFAR-10 datasets.
Original language | English (US) |
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Title of host publication | 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Electronic) | 9781665491853 |
DOIs | |
State | Published - 2022 |
Event | 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 - Bangalore, India Duration: Dec 11 2022 → Dec 14 2022 |
Publication series
Name | 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 |
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Conference
Conference | 2022 IEEE International Conference on Emerging Electronics, ICEE 2022 |
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Country/Territory | India |
City | Bangalore |
Period | 12/11/22 → 12/14/22 |
Bibliographical note
Publisher Copyright:© 2022 IEEE.
Keywords
- Charge Trapping Memory
- Junctionless
- LTD
- LTP
- Neural Network
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
- Instrumentation