Mid-infrared luminescence from coupled quantum dots and wells

P. A. Shields; L. J. Li; R. J. Nicholas

doi:10.1016/j.physe.2003.11.042

Mid-infrared luminescence from coupled quantum dots and wells

P. A. Shields, L. J. Li, R. J. Nicholas^*

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.

Original language	English (US)
Pages (from-to)	341-344
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.042
State	Published - Mar 2004
Externally published	Yes
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: Jul 14 2003 → Jul 18 2003

Keywords

InSb
MOVPE
Mid-infrared
Quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2003.11.042

Cite this

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title = "Mid-infrared luminescence from coupled quantum dots and wells",

abstract = "Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.",

keywords = "InSb, MOVPE, Mid-infrared, Quantum dots",

author = "Shields, {P. A.} and Li, {L. J.} and Nicholas, {R. J.}",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.042",

language = "English (US)",

volume = "21",

pages = "341--344",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

note = "Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

}

TY - JOUR

T1 - Mid-infrared luminescence from coupled quantum dots and wells

AU - Shields, P. A.

AU - Li, L. J.

AU - Nicholas, R. J.

PY - 2004/3

Y1 - 2004/3

N2 - Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.

AB - Coupled nanostructures have been developed in the InAs/InSb/GaSb materials system in order to extend the emission wavelength further into the infrared, beyond 2 μm. The samples studied consist of a single narrow InAs quantum well grown below a layer of InSb quantum dots in a GaSb matrix, in which the coupling has been altered by changing the thickness of a GaSb spacer layer. The overall transition energy of the combined dot-well system is generally reduced with respect to the dots and well only but the dependence on spacer thickness is more complex than that expected from a simple envelope function model.

KW - InSb

KW - MOVPE

KW - Mid-infrared

KW - Quantum dots

UR - http://www.scopus.com/inward/record.url?scp=1642310793&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.042

DO - 10.1016/j.physe.2003.11.042

M3 - Conference article

AN - SCOPUS:1642310793

SN - 1386-9477

VL - 21

SP - 341

EP - 344

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Mid-infrared luminescence from coupled quantum dots and wells

Abstract

Keywords

ASJC Scopus subject areas

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