The results of investigations into interfaces and thin films in heterostructures with the use of spherical-aberration-corrected transmission and scanning transmission electron microscopy (STEM) by applying supersensitive energy-dispersion X-ray microanalysis are presented. Using examples of heterostructures of various materials (Si/Ge, InGaAs/InAs, AlN/GaN, YBCO on various substrates and LuFe(Co)O3/YSZ), the possibility of determining the morphology and atomic structure of interfaces and mechanisms of the formation of layers is shown.
|Original language||English (US)|
|Number of pages||11|
|Journal||Nanotechnologies in Russia|
|State||Published - May 2013|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics