Microstructure and 90° domain assemblages of Pb(Zr, Ti)O3//RuO2 capacitors as a function of Zr-to-Ti stoichiometry

B. A. Tuttle; T. J. Headley; H. N. Al-Shareef; J. A. Voigt; M. Rodriguez; J. Michael; W. L. Warren

doi:10.1557/JMR.1996.0294

Microstructure and 90° domain assemblages of Pb(Zr, Ti)O₃//RuO₂ capacitors as a function of Zr-to-Ti stoichiometry

B. A. Tuttle^*, T. J. Headley, H. N. Al-Shareef, J. A. Voigt, M. Rodriguez, J. Michael, W. L. Warren

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Planar microstructure, 90° domain configurations, and cross-sectional perovskite grain morphology were characterized for a series of Pb(Zr, Ti)O₃//RuO₂ thin film capacitors. Perovskite grain size increased substantially with increasing Zr concentration of the Pb(Zr, Ti)O₃ (PZT) films, being on the order of 0.15 μm for PZT 20/80 films and 2.5 μm for PZT 50/50 films. While PZT 20/80 and PZT 30/70 films were single phase perovskite, the PZT 40/60 and 50/50 films contained a second phase with fluorite structure. The second phase matrix consisted of two nanophases, one having fluorite structure while the other was amorphous. Both the amorphous nanophase and the fluorite nanophase were Pb deficient compared to the perovskite phase. Differences in cross-sectional perovskite grain morphology were substantial for these materials, with the PZT 40/60 film being almost entirely columnar and the PZT 20/80 film exhibiting almost entirely granular morphology. Differences in 90° domain wall density were essentially negligible among the films, suggesting that if 90° domains were responsible for the differences in electrical properties, it is not due to 90° domain population.

Original language	English (US)
Pages (from-to)	2309-2317
Number of pages	9
Journal	Journal of Materials Research
Volume	11
Issue number	9
DOIs	https://doi.org/10.1557/JMR.1996.0294
State	Published - Sep 1996
Externally published	Yes

Bibliographical note

Funding Information:
This work was performed at Sandia National Laboratories supported by the United States Department of Energy under Contract No. DE-ACO4-94AL85000 and ARPA. The authors would like to thank R. W. Schwartz, D. Dimos, R. Ramesh, and B. Morosin for enlightening technical discussions. The authors would also like to thank W. R. Olson, M. Gonzales, T. Chaves, and G. Zender for their technical support.

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/JMR.1996.0294

Cite this

@article{7d4269cb31ba4875a5b6ec3d1f9980c7,

title = "Microstructure and 90° domain assemblages of Pb(Zr, Ti)O3//RuO2 capacitors as a function of Zr-to-Ti stoichiometry",

abstract = "Planar microstructure, 90° domain configurations, and cross-sectional perovskite grain morphology were characterized for a series of Pb(Zr, Ti)O3//RuO2 thin film capacitors. Perovskite grain size increased substantially with increasing Zr concentration of the Pb(Zr, Ti)O3 (PZT) films, being on the order of 0.15 μm for PZT 20/80 films and 2.5 μm for PZT 50/50 films. While PZT 20/80 and PZT 30/70 films were single phase perovskite, the PZT 40/60 and 50/50 films contained a second phase with fluorite structure. The second phase matrix consisted of two nanophases, one having fluorite structure while the other was amorphous. Both the amorphous nanophase and the fluorite nanophase were Pb deficient compared to the perovskite phase. Differences in cross-sectional perovskite grain morphology were substantial for these materials, with the PZT 40/60 film being almost entirely columnar and the PZT 20/80 film exhibiting almost entirely granular morphology. Differences in 90° domain wall density were essentially negligible among the films, suggesting that if 90° domains were responsible for the differences in electrical properties, it is not due to 90° domain population.",

author = "Tuttle, {B. A.} and Headley, {T. J.} and Al-Shareef, {H. N.} and Voigt, {J. A.} and M. Rodriguez and J. Michael and Warren, {W. L.}",

note = "Funding Information: This work was performed at Sandia National Laboratories supported by the United States Department of Energy under Contract No. DE-ACO4-94AL85000 and ARPA. The authors would like to thank R. W. Schwartz, D. Dimos, R. Ramesh, and B. Morosin for enlightening technical discussions. The authors would also like to thank W. R. Olson, M. Gonzales, T. Chaves, and G. Zender for their technical support.",

year = "1996",

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doi = "10.1557/JMR.1996.0294",

language = "English (US)",

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T1 - Microstructure and 90° domain assemblages of Pb(Zr, Ti)O3//RuO2 capacitors as a function of Zr-to-Ti stoichiometry

AU - Tuttle, B. A.

AU - Headley, T. J.

AU - Al-Shareef, H. N.

AU - Voigt, J. A.

AU - Rodriguez, M.

AU - Michael, J.

AU - Warren, W. L.

N1 - Funding Information: This work was performed at Sandia National Laboratories supported by the United States Department of Energy under Contract No. DE-ACO4-94AL85000 and ARPA. The authors would like to thank R. W. Schwartz, D. Dimos, R. Ramesh, and B. Morosin for enlightening technical discussions. The authors would also like to thank W. R. Olson, M. Gonzales, T. Chaves, and G. Zender for their technical support.

PY - 1996/9

Y1 - 1996/9

N2 - Planar microstructure, 90° domain configurations, and cross-sectional perovskite grain morphology were characterized for a series of Pb(Zr, Ti)O3//RuO2 thin film capacitors. Perovskite grain size increased substantially with increasing Zr concentration of the Pb(Zr, Ti)O3 (PZT) films, being on the order of 0.15 μm for PZT 20/80 films and 2.5 μm for PZT 50/50 films. While PZT 20/80 and PZT 30/70 films were single phase perovskite, the PZT 40/60 and 50/50 films contained a second phase with fluorite structure. The second phase matrix consisted of two nanophases, one having fluorite structure while the other was amorphous. Both the amorphous nanophase and the fluorite nanophase were Pb deficient compared to the perovskite phase. Differences in cross-sectional perovskite grain morphology were substantial for these materials, with the PZT 40/60 film being almost entirely columnar and the PZT 20/80 film exhibiting almost entirely granular morphology. Differences in 90° domain wall density were essentially negligible among the films, suggesting that if 90° domains were responsible for the differences in electrical properties, it is not due to 90° domain population.

AB - Planar microstructure, 90° domain configurations, and cross-sectional perovskite grain morphology were characterized for a series of Pb(Zr, Ti)O3//RuO2 thin film capacitors. Perovskite grain size increased substantially with increasing Zr concentration of the Pb(Zr, Ti)O3 (PZT) films, being on the order of 0.15 μm for PZT 20/80 films and 2.5 μm for PZT 50/50 films. While PZT 20/80 and PZT 30/70 films were single phase perovskite, the PZT 40/60 and 50/50 films contained a second phase with fluorite structure. The second phase matrix consisted of two nanophases, one having fluorite structure while the other was amorphous. Both the amorphous nanophase and the fluorite nanophase were Pb deficient compared to the perovskite phase. Differences in cross-sectional perovskite grain morphology were substantial for these materials, with the PZT 40/60 film being almost entirely columnar and the PZT 20/80 film exhibiting almost entirely granular morphology. Differences in 90° domain wall density were essentially negligible among the films, suggesting that if 90° domains were responsible for the differences in electrical properties, it is not due to 90° domain population.

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