Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Chenchen Wang; Leslie H. Jimison; Ludwig Goris; Iain McCulloch; Martin Heeney; Alexander Ziegler; Alberto Salleo

doi:10.1002/adma.200902303

Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Chenchen Wang, Leslie H. Jimison, Ludwig Goris, Iain McCulloch, Martin Heeney, Alexander Ziegler, Alberto Salleo

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure). © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English (US)
Pages (from-to)	697-701
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	6
DOIs	https://doi.org/10.1002/adma.200902303
State	Published - Feb 9 2010
Externally published	Yes

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Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

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AU - Wang, Chenchen

AU - Jimison, Leslie H.

AU - Goris, Ludwig

AU - McCulloch, Iain

AU - Heeney, Martin

AU - Ziegler, Alexander

AU - Salleo, Alberto

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AB - High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure). © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Abstract

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ASJC Scopus subject areas

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