Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Chenchen Wang, Leslie H. Jimison, Ludwig Goris, Iain McCulloch, Martin Heeney, Alexander Ziegler, Alberto Salleo

Research output: Contribution to journalArticlepeer-review

72 Scopus citations

Abstract

High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure). © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Original languageEnglish (US)
Pages (from-to)697-701
Number of pages5
JournalAdvanced Materials
Volume22
Issue number6
DOIs
StatePublished - Feb 9 2010
Externally publishedYes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2023-02-14

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering

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