Microstructural origin of high mobility in high-performance poly(thieno-thiophene) thin-film transistors

Chenchen Wang, Leslie H. Jimison, Ludwig Goris, Iain Mcculloch, Martin Heeney, Alexander Ziegler, Alberto Salleo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Scopus citations


High-mobility PBTTT thin-film transistors are modeled with a mobility edge model and compared with P3HT. Their improved performance is not due to a low trap density but rather due to high mobility in the crystallites. Characterization of delaminated films with transmission electron microscopy and atomic force microscopy indicates terraces that are composed of nanometer-scale features (see figure).

Original languageEnglish (US)
Pages (from-to)697-701
Number of pages5
JournalAdvanced Materials
Issue number6
StatePublished - Feb 9 2010

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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