Microstructural analysis of N-polar InGaN directly grown on a ScAlMgO4(0001) substrate

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We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.

Original languageEnglish (US)
Article number065501
Issue number6
StatePublished - Jun 2022

Bibliographical note

Funding Information:
This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).

Publisher Copyright:
© 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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