Abstract
We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-phase epitaxy on a ScAlMgO4(0001) (SAM) substrate without a low-Temperature buffer layer. The InGaN layer was tensile-strained, and its stoichiometry corresponded to In0.13Ga0.87N. We also present the microstructural observation of the InGaN/SAM interface via integrated differential phase contrast-scanning transmission electron microscopy. The results show that the interface between N-polar InGaN and SAM occurs between the O atoms of the O-Sc SAM surface and the (Ga,In) atoms of InGaN.
Original language | English (US) |
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Article number | 065501 |
Journal | APPLIED PHYSICS EXPRESS |
Volume | 15 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2022 |
Bibliographical note
Funding Information:This work was financially supported by King Abdullah University of Science and Technology (KAUST) (BAS/1/1676-01-01).
Publisher Copyright:
© 2022 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.
ASJC Scopus subject areas
- General Engineering
- General Physics and Astronomy