TY - JOUR
T1 - Micro-Trench Deep-Ultraviolet LEDs With Boosted Efficiency for High-Speed Solar-Blind Optical Communication
AU - Memon, Muhammad Hunain
AU - Yu, Huabin
AU - Jia, Hongfeng
AU - Li, Dong
AU - Wang, Rui
AU - Yao, Jikai
AU - Kang, Yang
AU - Chen, Wei
AU - Li, Shuiqing
AU - Zheng, Jinjian
AU - Zhang, Jiangyong
AU - Shen, Chao
AU - Tao, Tao
AU - Ooi, Boon S.
AU - Sun, Haiding
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2025
Y1 - 2025
N2 - The deep-ultraviolet (DUV) band presents an untapped opportunity for enhancing optical wireless communication, particularly in outdoor environments where visible light often falls short. To unlock this potential, a highly efficient DUV light source with substantial bandwidth is essential. Herein, we propose an easy-to-fabricate micro-trench DUV light-emitting diode (MT-LED) architecture, having micro trenches on the LED surface incorporating the micro rings with Ni/Au p-pad, which also works as a reflector as well as an interconnect. The embedded micro-trench structure promotes efficient escape of photons from the LED, resulting in improved light output power (LOP), with a significant 1.25 times higher in comparison with conventional LED (C-LED) at a current density of 120 A/cm2. More importantly, an enlarged bandwidth was also achieved in MT-LED, with a demonstration of 11.7% higher 3 dB optical bandwidth in contrast to the C-LED since the incorporation of micro-trench structure exhibits less resistance-capacitance time constant and a shorter carrier lifetime. Remarkably, the simultaneous improved LOP and enlarged optical bandwidth in MT-LED strongly boost its communication data rate by 54.7%, increasing from 1.240 Gbps (using C-LED) to 1.919 Gbps. The micro-trench structure is essential for developing high-speed, solar-blind optical wireless communication systems, significantly advancing modern connectivity and optical communication networks.
AB - The deep-ultraviolet (DUV) band presents an untapped opportunity for enhancing optical wireless communication, particularly in outdoor environments where visible light often falls short. To unlock this potential, a highly efficient DUV light source with substantial bandwidth is essential. Herein, we propose an easy-to-fabricate micro-trench DUV light-emitting diode (MT-LED) architecture, having micro trenches on the LED surface incorporating the micro rings with Ni/Au p-pad, which also works as a reflector as well as an interconnect. The embedded micro-trench structure promotes efficient escape of photons from the LED, resulting in improved light output power (LOP), with a significant 1.25 times higher in comparison with conventional LED (C-LED) at a current density of 120 A/cm2. More importantly, an enlarged bandwidth was also achieved in MT-LED, with a demonstration of 11.7% higher 3 dB optical bandwidth in contrast to the C-LED since the incorporation of micro-trench structure exhibits less resistance-capacitance time constant and a shorter carrier lifetime. Remarkably, the simultaneous improved LOP and enlarged optical bandwidth in MT-LED strongly boost its communication data rate by 54.7%, increasing from 1.240 Gbps (using C-LED) to 1.919 Gbps. The micro-trench structure is essential for developing high-speed, solar-blind optical wireless communication systems, significantly advancing modern connectivity and optical communication networks.
KW - Deep ultraviolet (DUV)
KW - light emitting diode (LED)
KW - optical wireless communication
KW - solar blind communication
UR - http://www.scopus.com/inward/record.url?scp=86000425978&partnerID=8YFLogxK
U2 - 10.1109/JLT.2024.3486102
DO - 10.1109/JLT.2024.3486102
M3 - Article
AN - SCOPUS:86000425978
SN - 0733-8724
VL - 43
SP - 2248
EP - 2254
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
IS - 5
ER -