Micro-light-emitting diodes with III–nitride tunnel junction contacts grown by metalorganic chemical vapor deposition

David Hwang, Asad J. Mughal, Matthew S. Wong, Abdullah I. Alhassan, Shuji Nakamura, Steven P. DenBaars

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Micro-light-emitting diodes (µLEDs) with tunnel junction (TJ) contacts were grown entirely by metalorganic chemical vapor deposition. A LED structure was grown, treated with UV ozone and hydrofluoric acid, and reloaded into the reactor for TJ regrowth. The silicon doping level of the n++-GaN TJ was varied to examine its effect on voltage. µLEDs from 2.5 × 10−5 to 0.01 mm2 in area were processed, and the voltage penalty of the TJ for the smallest µLED at 20 A/cm2 was 0.60 V relative to that for a standard LED with indium tin oxide. The peak external quantum efficiency of the TJ LED was 34%.
Original languageEnglish (US)
Pages (from-to)012102
JournalApplied Physics Express
Issue number1
StatePublished - Dec 13 2017
Externally publishedYes

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