Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Toms, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza, M. Nafría

Research output: Contribution to journalArticlepeer-review

50 Scopus citations


As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5 of the total contact area. © 2011 American Institute of Physics.
Original languageEnglish (US)
JournalApplied Physics Letters
Issue number21
StatePublished - Nov 21 2011
Externally publishedYes

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Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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