Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè; A. Pérez-Toms; M. Placidi; J. Llobet; N. Baron; S. Chenot; Y. Cordier; J. C. Moreno; P. M. Gammon; M. R. Jennings; M. Porti; A. Bayerl; M. Lanza; M. Nafría

doi:10.1063/1.3661167

Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

A. Fontserè, A. Pérez-Toms, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza, M. Nafría

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50 Scopus citations

Abstract

As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5 of the total contact area. © 2011 American Institute of Physics.

Original language	English (US)
Journal	Applied Physics Letters
Volume	99
Issue number	21
DOIs	https://doi.org/10.1063/1.3661167
State	Published - Nov 21 2011
Externally published	Yes

Bibliographical note

Generated from Scopus record by KAUST IRTS on 2021-03-16

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3661167

Cite this

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title = "Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN",

abstract = "As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5 of the total contact area. {\textcopyright} 2011 American Institute of Physics.",

author = "A. Fontser{\`e} and A. P{\'e}rez-Toms and M. Placidi and J. Llobet and N. Baron and S. Chenot and Y. Cordier and Moreno, {J. C.} and Gammon, {P. M.} and Jennings, {M. R.} and M. Porti and A. Bayerl and M. Lanza and M. Nafr{\'i}a",

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doi = "10.1063/1.3661167",

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T1 - Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

AU - Fontserè, A.

AU - Pérez-Toms, A.

AU - Placidi, M.

AU - Llobet, J.

AU - Baron, N.

AU - Chenot, S.

AU - Cordier, Y.

AU - Moreno, J. C.

AU - Gammon, P. M.

AU - Jennings, M. R.

AU - Porti, M.

AU - Bayerl, A.

AU - Lanza, M.

AU - Nafría, M.

N1 - Generated from Scopus record by KAUST IRTS on 2021-03-16

PY - 2011/11/21

Y1 - 2011/11/21

N2 - As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5 of the total contact area. © 2011 American Institute of Physics.

AB - As GaN technology continues to gain popularity, it is necessary to control the ohmic contact properties and to improve device consistency across the whole wafer. In this paper, we use a range of submicron characterization tools to understand the conduction mechanisms through the AlGaN/GaN ohmic contact. Our results suggest that there is a direct path for electron flow between the two dimensional electron gas and the contact pad. The estimated area of these highly conductive pillars is around 5 of the total contact area. © 2011 American Institute of Physics.

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U2 - 10.1063/1.3661167

DO - 10.1063/1.3661167

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VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Micro and nano analysis of 0.2 mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN

Abstract

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