TY - PAT
T1 - Method For Producing Mechanically Flexible Silicon Substrate
AU - Hussain, Muhammad Mustafa
AU - Rojas, Jhonathan Prieto
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2014/8/28
Y1 - 2014/8/28
N2 - A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.
AB - A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.
UR - http://hdl.handle.net/10754/595312
UR - http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140239459%22.PGNR.&OS=DN/20140239459&RS=DN/20140239459
UR - http://assignment.uspto.gov/#/search?adv=publNum:20140239459
UR - http://www.google.com/patents/US20140239459
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014239459A1&KC=A1&FT=D
M3 - Patent
M1 - US9520293B2
ER -