Metal wet-etch process development for dual metal gate CMOS using standard industry tools

Muhammad Mustafa Hussain; Naim Moumen; Joel Barnett; Jason Saulters; David Baker; Mohammad Akbar; Zhibo Zhang

Metal wet-etch process development for dual metal gate CMOS using standard industry tools

Muhammad Mustafa Hussain^*, Naim Moumen, Joel Barnett, Jason Saulters, David Baker, Mohammad Akbar, Zhibo Zhang

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The development of wet-etch chemistries using standard fab chemicals and tools has been studied to successfully integrate dual work function metal gate CMOS. Candidate gate materials studied were TiN, Ta, TaN and TaSiN. Two hard mask materials, amorphous silicon (am-Si) and TEOS, and two gate dielectric films, Atomic Layer Deposition (ALD) HfO ₂ and HfSi _xO _y, were also studied for their etch selectivity to various chemical formulations. In addition, some preliminary electrical results of devices processed using this wet-etch module have been reported here.

Original language	English (US)
Pages	188-197
Number of pages	10
State	Published - 2005
Externally published	Yes
Event	207th ECS Meeting - Quebec, Canada Duration: May 16 2005 → May 20 2005

Other

Other	207th ECS Meeting
Country/Territory	Canada
City	Quebec
Period	05/16/05 → 05/20/05

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Metal wet-etch process development for dual metal gate CMOS using standard industry tools",

abstract = "The development of wet-etch chemistries using standard fab chemicals and tools has been studied to successfully integrate dual work function metal gate CMOS. Candidate gate materials studied were TiN, Ta, TaN and TaSiN. Two hard mask materials, amorphous silicon (am-Si) and TEOS, and two gate dielectric films, Atomic Layer Deposition (ALD) HfO 2 and HfSi xO y, were also studied for their etch selectivity to various chemical formulations. In addition, some preliminary electrical results of devices processed using this wet-etch module have been reported here.",

author = "Hussain, {Muhammad Mustafa} and Naim Moumen and Joel Barnett and Jason Saulters and David Baker and Mohammad Akbar and Zhibo Zhang",

year = "2005",

language = "English (US)",

pages = "188--197",

note = "207th ECS Meeting ; Conference date: 16-05-2005 Through 20-05-2005",

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T1 - Metal wet-etch process development for dual metal gate CMOS using standard industry tools

AU - Hussain, Muhammad Mustafa

AU - Moumen, Naim

AU - Barnett, Joel

AU - Saulters, Jason

AU - Baker, David

AU - Akbar, Mohammad

AU - Zhang, Zhibo

PY - 2005

Y1 - 2005

N2 - The development of wet-etch chemistries using standard fab chemicals and tools has been studied to successfully integrate dual work function metal gate CMOS. Candidate gate materials studied were TiN, Ta, TaN and TaSiN. Two hard mask materials, amorphous silicon (am-Si) and TEOS, and two gate dielectric films, Atomic Layer Deposition (ALD) HfO 2 and HfSi xO y, were also studied for their etch selectivity to various chemical formulations. In addition, some preliminary electrical results of devices processed using this wet-etch module have been reported here.

AB - The development of wet-etch chemistries using standard fab chemicals and tools has been studied to successfully integrate dual work function metal gate CMOS. Candidate gate materials studied were TiN, Ta, TaN and TaSiN. Two hard mask materials, amorphous silicon (am-Si) and TEOS, and two gate dielectric films, Atomic Layer Deposition (ALD) HfO 2 and HfSi xO y, were also studied for their etch selectivity to various chemical formulations. In addition, some preliminary electrical results of devices processed using this wet-etch module have been reported here.

UR - http://www.scopus.com/inward/record.url?scp=31844438304&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:31844438304

SP - 188

EP - 197

T2 - 207th ECS Meeting

Y2 - 16 May 2005 through 20 May 2005

ER -

Metal wet-etch process development for dual metal gate CMOS using standard industry tools

Abstract

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ASJC Scopus subject areas

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