Metal wet etch process development for dual metal gate CMOS

Muhammad Mustafa Hussain; Naim Moumen; Joel Barnett; Jason Saulters; David Baker; Zhibo Zhang

doi:10.1149/1.2081827

Metal wet etch process development for dual metal gate CMOS

Muhammad Mustafa Hussain^*, Naim Moumen, Joel Barnett, Jason Saulters, David Baker, Zhibo Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Wet etch chemistries using standard chemicals and tools available in the industrial clean room have been studied to successfully integrate dual work function metal gate complementary metal oxide semiconductor (CMOS). Candidate gate materials included TiN, Ta, TaN, TaCN, TaSiN, and TiSiN deposited by atomic layer deposition (ALD), physical vapor deposition, and chemical vapor deposition. A plasma enhanced tetraethylorthosilicate hard mask and two gate dielectric films, ALD-based HfO₂ and HfSi_xO_y, were also studied for their etch selectivity to various chemical formulations. In addition, preliminary electrical results of capacitor devices processed using these wet etch processes are reported.

Original language	English (US)
Pages (from-to)	G333-G336
Journal	Electrochemical and Solid-State Letters
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/1.2081827
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

General Chemical Engineering
General Materials Science
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.2081827

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abstract = "Wet etch chemistries using standard chemicals and tools available in the industrial clean room have been studied to successfully integrate dual work function metal gate complementary metal oxide semiconductor (CMOS). Candidate gate materials included TiN, Ta, TaN, TaCN, TaSiN, and TiSiN deposited by atomic layer deposition (ALD), physical vapor deposition, and chemical vapor deposition. A plasma enhanced tetraethylorthosilicate hard mask and two gate dielectric films, ALD-based HfO2 and HfSixOy, were also studied for their etch selectivity to various chemical formulations. In addition, preliminary electrical results of capacitor devices processed using these wet etch processes are reported.",

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T1 - Metal wet etch process development for dual metal gate CMOS

AU - Hussain, Muhammad Mustafa

AU - Moumen, Naim

AU - Barnett, Joel

AU - Saulters, Jason

AU - Baker, David

AU - Zhang, Zhibo

PY - 2005

Y1 - 2005

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AB - Wet etch chemistries using standard chemicals and tools available in the industrial clean room have been studied to successfully integrate dual work function metal gate complementary metal oxide semiconductor (CMOS). Candidate gate materials included TiN, Ta, TaN, TaCN, TaSiN, and TiSiN deposited by atomic layer deposition (ALD), physical vapor deposition, and chemical vapor deposition. A plasma enhanced tetraethylorthosilicate hard mask and two gate dielectric films, ALD-based HfO2 and HfSixOy, were also studied for their etch selectivity to various chemical formulations. In addition, preliminary electrical results of capacitor devices processed using these wet etch processes are reported.

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JF - Electrochemical and Solid-State Letters

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Metal wet etch process development for dual metal gate CMOS

Abstract

ASJC Scopus subject areas

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