Metal wet etch process development for dual metal gate CMOS

Muhammad Mustafa Hussain*, Naim Moumen, Joel Barnett, Jason Saulters, David Baker, Zhibo Zhang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


Wet etch chemistries using standard chemicals and tools available in the industrial clean room have been studied to successfully integrate dual work function metal gate complementary metal oxide semiconductor (CMOS). Candidate gate materials included TiN, Ta, TaN, TaCN, TaSiN, and TiSiN deposited by atomic layer deposition (ALD), physical vapor deposition, and chemical vapor deposition. A plasma enhanced tetraethylorthosilicate hard mask and two gate dielectric films, ALD-based HfO2 and HfSixOy, were also studied for their etch selectivity to various chemical formulations. In addition, preliminary electrical results of capacitor devices processed using these wet etch processes are reported.

Original languageEnglish (US)
JournalElectrochemical and Solid-State Letters
Issue number12
StatePublished - Dec 5 2005

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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