Abstract
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe 2 and n-type MoSe 2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.
Original language | English (US) |
---|---|
Article number | 1900861 |
Journal | Advanced Materials |
Volume | 31 |
Issue number | 18 |
DOIs | |
State | Published - May 3 2019 |
Bibliographical note
Publisher Copyright:© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- 2D materials
- chemical vapor deposition
- heterojunctions
- molybdenum diselenide
- selective growth
- transition metal dichalcogenides
- tungsten diselenide
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering