Abstract
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metal-oxide-semiconductor inverter based on p-type WSe 2 and n-type MoSe 2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.
| Original language | English (US) |
|---|---|
| Article number | 1900861 |
| Journal | Advanced Materials |
| Volume | 31 |
| Issue number | 18 |
| DOIs | |
| State | Published - May 3 2019 |
Bibliographical note
Funding Information:M.-H.C. and H.-L.T. contributed equally to this work. V.T. and L.J.L. thank the support from KAUST (Saudi Arabia). W.H.C. acknowledges support from MOST of Taiwan (MOST-104-2628-M-009-002-MY3, MOST-105-2119-M-009-014-MY3) and the Center for Emergent Functional Matter Science (CEFMS) of NCTU. Y.H. and D.A.M. made use of the electron microscopy facility of the Cornell Center for Materials Research (CCMR) with support from the National Science Foundation (NSF) Materials Research Science and Engineering Centers (MRSEC) program (DMR-1719875) and NSF award 1429155. V.T. acknowledges the support from User Proposals (#4420 and #5067) at the Molecular Foundry, Lawrence Berkeley National Lab, supported by the Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The authors also acknowledge the support from Nanofabrication Core Lab in KAUST.
Funding Information:
M.-H.C. and H.-L.T. contributed equally to this work. V.T. and L.J.L. thank the support from KAUST (Saudi Arabia). W.H.C. acknowledges support from MOST of Taiwan (MOST-104-2628-M-009-002-MY3, MOST-105-2119-M-009-014-MY3) and the Center for Emergent Functional Matter Science (CEFMS) of NCTU. Y.H. and D.A.M. made use of the electron microscopy facility of the Cornell Center for Materials Research (CCMR) with support from the National Science Foundation (NSF) Materials Research Science and Engineering Centers (MRSEC) program (DMR-1719875) and NSF award 1429155. V.T. acknowledges the support from User Proposals (#4420 and #5067) at the Molecular Foundry, Lawrence Berkeley National Lab, supported by the Office of Basic Energy Sciences, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The authors also acknowledge the support from Nanofabrication Core Lab in KAUST. Note: The MRSEC program grant number was corrected on May 2, 2019, after initial publication online.
Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- 2D materials
- chemical vapor deposition
- heterojunctions
- molybdenum diselenide
- selective growth
- transition metal dichalcogenides
- tungsten diselenide
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering