Metal gate work function enhancement using thin AlN x interfacial layers has been evaluated. It was found that band edge effective work functions (∼5.10 eV) can be achieved on hafnium-based high dielectric constant (high-k) materials using the AlN x interfacial layer and TiSiN electrodes. It was also found that the effective work function enhancement by the AlN x interfacial layer increased when the concentration of SiO 2 in the gate dielectric was increased. Thus, the enhancement was minimal for HfO 2 and maximum for SiO 2. A model is proposed to explain these results and a bonding analysis is presented to support the proposed model.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - Mar 30 2006|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)