Metal-free, single-polymer device exhibits resistive memory effect

Unnat Sampatraj Bhansali, Yasser Khan, Dong Kyu Cha, Mahmoud N. Almadhoun, Ruipeng Li, Long Chen, Aram Amassian, Ihab N. Odeh, Husam N. Alshareef

Research output: Contribution to journalArticlepeer-review

74 Scopus citations


All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
Original languageEnglish (US)
Pages (from-to)10518-10524
Number of pages7
JournalACS Nano
Issue number12
StatePublished - Nov 14 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: The authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.

ASJC Scopus subject areas

  • General Physics and Astronomy
  • General Materials Science
  • General Engineering


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