Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.
Bibliographical noteKAUST Repository Item: Exported on 2022-06-06
Acknowledgements: M.L. acknowledges support from the King Abdullah University of Science and Technology. A.S. acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement numbers 682675 and 966764). D.A. acknowledges funding from Office of Naval Research grant N00014-20-1-2104 and Air Force Research Laboratory award FA9550-21-1-0460.
M.L. acknowledges S. Bertolazzi from Yole Développement for advice on memory market trends, S. Pazos from the King Abdullah University of Science and Technology for useful discussions on device and system technology, and E. Sahagun from Scixel for graphics design.
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