Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Mario Lanza; Abu Sebastian; Wei D. Lu; Manuel Le Gallo; Meng-Fan Chang; Deji Akinwande; Francesco M. Puglisi; Husam N. Alshareef; Ming Liu; Juan B. Roldan

doi:10.1126/science.abj9979

Memristive technologies for data storage, computation, encryption, and radio-frequency communication

Mario Lanza, Abu Sebastian, Wei D. Lu, Manuel Le Gallo, Meng-Fan Chang, Deji Akinwande, Francesco M. Puglisi, Husam N. Alshareef, Ming Liu, Juan B. Roldan

Research output: Contribution to journal › Article › peer-review

244 Scopus citations

Abstract

Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

Original language	English (US)
Journal	Science
Volume	376
Issue number	6597
DOIs	https://doi.org/10.1126/science.abj9979
State	Published - Jun 3 2022

Bibliographical note

KAUST Repository Item: Exported on 2022-06-06
Acknowledgements: M.L. acknowledges support from the King Abdullah University of Science and Technology. A.S. acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement numbers 682675 and 966764). D.A. acknowledges funding from Office of Naval Research grant N00014-20-1-2104 and Air Force Research Laboratory award FA9550-21-1-0460.
M.L. acknowledges S. Bertolazzi from Yole Développement for advice on memory market trends, S. Pazos from the King Abdullah University of Science and Technology for useful discussions on device and system technology, and E. Sahagun from Scixel for graphics design.

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title = "Memristive technologies for data storage, computation, encryption, and radio-frequency communication",

abstract = "Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.",

author = "Mario Lanza and Abu Sebastian and Lu, {Wei D.} and {Le Gallo}, Manuel and Meng-Fan Chang and Deji Akinwande and Puglisi, {Francesco M.} and Alshareef, {Husam N.} and Ming Liu and Roldan, {Juan B.}",

note = "KAUST Repository Item: Exported on 2022-06-06 Acknowledgements: M.L. acknowledges support from the King Abdullah University of Science and Technology. A.S. acknowledges funding from the European Research Council (ERC) under the European Union{\textquoteright}s Horizon 2020 research and innovation programme (grant agreement numbers 682675 and 966764). D.A. acknowledges funding from Office of Naval Research grant N00014-20-1-2104 and Air Force Research Laboratory award FA9550-21-1-0460. M.L. acknowledges S. Bertolazzi from Yole D{\'e}veloppement for advice on memory market trends, S. Pazos from the King Abdullah University of Science and Technology for useful discussions on device and system technology, and E. Sahagun from Scixel for graphics design.",

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doi = "10.1126/science.abj9979",

language = "English (US)",

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AU - Lanza, Mario

AU - Sebastian, Abu

AU - Lu, Wei D.

AU - Le Gallo, Manuel

AU - Chang, Meng-Fan

AU - Akinwande, Deji

AU - Puglisi, Francesco M.

AU - Alshareef, Husam N.

AU - Liu, Ming

AU - Roldan, Juan B.

N1 - KAUST Repository Item: Exported on 2022-06-06 Acknowledgements: M.L. acknowledges support from the King Abdullah University of Science and Technology. A.S. acknowledges funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement numbers 682675 and 966764). D.A. acknowledges funding from Office of Naval Research grant N00014-20-1-2104 and Air Force Research Laboratory award FA9550-21-1-0460. M.L. acknowledges S. Bertolazzi from Yole Développement for advice on memory market trends, S. Pazos from the King Abdullah University of Science and Technology for useful discussions on device and system technology, and E. Sahagun from Scixel for graphics design.

PY - 2022/6/3

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N2 - Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

AB - Memristive devices, which combine a resistor with memory functions such that voltage pulses can change their resistance (and hence their memory state) in a nonvolatile manner, are beginning to be implemented in integrated circuits for memory applications. However, memristive devices could have applications in many other technologies, such as non–von Neumann in-memory computing in crossbar arrays, random number generation for data security, and radio-frequency switches for mobile communications. Progress toward the integration of memristive devices in commercial solid-state electronic circuits and other potential applications will depend on performance and reliability challenges that still need to be addressed, as described here.

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VL - 376

JO - Science

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Memristive technologies for data storage, computation, encryption, and radio-frequency communication

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