Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Sebastian Pazos; Yaqing Shen; Haoran Zhang; Jordi Verdú; Andrés Fontana; Wenwen Zheng; Yue Yuan; Osamah Alharbi; Yue Ping; Eloi Guerrero; Lluís Acosta; Pedro de Paco; Dimitra Psychogiou; Atif Shamim; Deji Akinwande; Mario Lanza

doi:10.1038/s41928-024-01192-2

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Sebastian Pazos, Yaqing Shen, Haoran Zhang, Jordi Verdú, Andrés Fontana, Wenwen Zheng, Yue Yuan, Osamah Alharbi, Yue Ping, Eloi Guerrero, Lluís Acosta, Pedro de Paco, Dimitra Psychogiou, Atif Shamim, Deji Akinwande, Mario Lanza^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz.

Original language	English (US)
Pages (from-to)	557-566
Number of pages	10
Journal	Nature Electronics
Volume	7
Issue number	7
DOIs	https://doi.org/10.1038/s41928-024-01192-2
State	Published - Jul 2024

Bibliographical note

Publisher Copyright:
© The Author(s), under exclusive licence to Springer Nature Limited 2024.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

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10.1038/s41928-024-01192-2

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Pazos, S., Shen, Y., Zhang, H., Verdú, J., Fontana, A., Zheng, W., Yuan, Y., Alharbi, O., Ping, Y., Guerrero, E., Acosta, L., de Paco, P., Psychogiou, D., Shamim, A., Akinwande, D., & Lanza, M. (2024). Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications. Nature Electronics, 7(7), 557-566. https://doi.org/10.1038/s41928-024-01192-2

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title = "Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications",

abstract = "Radiofrequency switches that drive or block high-frequency electromagnetic signals—typically, a few to tens of gigahertz—are essential components in modern communication devices. However, demand for higher data transmission rates requires radiofrequency switches capable of operating at frequencies beyond 100 GHz, which is challenging for current technologies. Here we report ambipolar memristive radiofrequency switches that are based on multilayer hexagonal boron nitride and can operate at frequencies up to 260 GHz. The ambipolar behaviour, which could help reduce peripheral hardware requirements, is due to a Joule-effect-assisted reset. We show switching in 21 devices with low-resistance states averaging 294 Ω and endurances of 2,000 cycles. With further biasing optimization, we reduce the resistance to 9.3 ± 3.7 Ω over more than 475 cycles, and achieve an insertion loss of 0.9 dB at 120 GHz. We also build a series–shunt device configuration with an isolation of 35 dB at 120 GHz.",

author = "Sebastian Pazos and Yaqing Shen and Haoran Zhang and Jordi Verd{\'u} and Andr{\'e}s Fontana and Wenwen Zheng and Yue Yuan and Osamah Alharbi and Yue Ping and Eloi Guerrero and Llu{\'i}s Acosta and \{de Paco\}, Pedro and Dimitra Psychogiou and Atif Shamim and Deji Akinwande and Mario Lanza",

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Pazos, S, Shen, Y, Zhang, H, Verdú, J, Fontana, A, Zheng, W , Yuan, Y, Alharbi, O, Ping, Y, Guerrero, E, Acosta, L, de Paco, P, Psychogiou, D, Shamim, A, Akinwande, D & Lanza, M 2024, 'Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications', Nature Electronics, vol. 7, no. 7, pp. 557-566. https://doi.org/10.1038/s41928-024-01192-2

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AU - Pazos, Sebastian

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AU - Zhang, Haoran

AU - Verdú, Jordi

AU - Fontana, Andrés

AU - Zheng, Wenwen

AU - Yuan, Yue

AU - Alharbi, Osamah

AU - Ping, Yue

AU - Guerrero, Eloi

AU - Acosta, Lluís

AU - de Paco, Pedro

AU - Psychogiou, Dimitra

AU - Shamim, Atif

AU - Akinwande, Deji

AU - Lanza, Mario

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Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Abstract

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