Mechanisms for Reducing DRAM Power Consumption

N Elnozahy Elmootazbellah; Karthick Rajamani; E Speight William; Lixin Zhang

Mechanisms for Reducing DRAM Power Consumption

N Elnozahy Elmootazbellah (Inventor), Karthick Rajamani (Inventor), E Speight William (Inventor), Lixin Zhang (Inventor)

Research output: Patent

Abstract

Mechanisms are provided for inhibiting precharging of memory cells of a dynamic random access memory (DRAM) structure. The mechanisms receive a command for accessing memory cells of the DRAM structure. The mechanisms further determine, based on the command, if precharging the memory cells following accessing the memory cells is to be inhibited. Moreover, the mechanisms send, in response to the determination indicating that precharging the memory cells is to be inhibited, a command to blocking logic of the DRAM structure to block precharging of the memory cells following accessing the memory cells.

Original language	English (US)
Patent number	US2011296097
IPC	G06F 12/ 00 A I
Priority date	05/27/10
State	Published - Dec 1 2011
Externally published	Yes

Cite this

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title = "Mechanisms for Reducing DRAM Power Consumption",

abstract = "Mechanisms are provided for inhibiting precharging of memory cells of a dynamic random access memory (DRAM) structure. The mechanisms receive a command for accessing memory cells of the DRAM structure. The mechanisms further determine, based on the command, if precharging the memory cells following accessing the memory cells is to be inhibited. Moreover, the mechanisms send, in response to the determination indicating that precharging the memory cells is to be inhibited, a command to blocking logic of the DRAM structure to block precharging of the memory cells following accessing the memory cells.",

author = "{Elnozahy Elmootazbellah}, N and Karthick Rajamani and {Speight William}, E and Lixin Zhang",

year = "2011",

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language = "English (US)",

type = "Patent",

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T1 - Mechanisms for Reducing DRAM Power Consumption

AU - Elnozahy Elmootazbellah, N

AU - Rajamani, Karthick

AU - Speight William, E

AU - Zhang, Lixin

PY - 2011/12/1

Y1 - 2011/12/1

N2 - Mechanisms are provided for inhibiting precharging of memory cells of a dynamic random access memory (DRAM) structure. The mechanisms receive a command for accessing memory cells of the DRAM structure. The mechanisms further determine, based on the command, if precharging the memory cells following accessing the memory cells is to be inhibited. Moreover, the mechanisms send, in response to the determination indicating that precharging the memory cells is to be inhibited, a command to blocking logic of the DRAM structure to block precharging of the memory cells following accessing the memory cells.

AB - Mechanisms are provided for inhibiting precharging of memory cells of a dynamic random access memory (DRAM) structure. The mechanisms receive a command for accessing memory cells of the DRAM structure. The mechanisms further determine, based on the command, if precharging the memory cells following accessing the memory cells is to be inhibited. Moreover, the mechanisms send, in response to the determination indicating that precharging the memory cells is to be inhibited, a command to blocking logic of the DRAM structure to block precharging of the memory cells following accessing the memory cells.

M3 - Patent

M1 - US2011296097

ER -

Mechanisms for Reducing DRAM Power Consumption

Abstract

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