Mechanism of Si intercalation in defective graphene on SiC

Thaneshwor P. Kaloni, Yingchun Cheng, Udo Schwingenschlögl, M. Upadhyay Kahaly

Research output: Contribution to journalArticlepeer-review

25 Scopus citations


Previously reported experimental findings on Si-intercalated graphene on SiC(0001) seem to indicate the possibility of an intercalation process based on the migration of the intercalant through atomic defects in the graphene sheet. We employ density functional theory to show that such a process is in fact feasible and obtain insight into its details. By means of total energy and nudged elastic band calculations we are able to establish the mechanism on an atomic level and to determine the driving forces involved in the different steps of the intercalation process through atomic defects.
Original languageEnglish (US)
Pages (from-to)23340
JournalJournal of Materials Chemistry
Issue number44
StatePublished - Oct 1 2012

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01


Dive into the research topics of 'Mechanism of Si intercalation in defective graphene on SiC'. Together they form a unique fingerprint.

Cite this