Mechanism of dopant-vacancy association in α-quartz GeO2

Hao Wang, Alexander Chroneos, Udo Schwingenschlögl

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.
Original languageEnglish (US)
Pages (from-to)083716
JournalJournal of Applied Physics
Issue number8
StatePublished - Feb 28 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01

ASJC Scopus subject areas

  • General Physics and Astronomy


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