Mechanical anomaly impact on metal-oxide-semiconductor capacitors on flexible silicon fabric

Mohamed T. Ghoneim, Arwa T. Kutbee, Seyed Faizelldin Ghodsi Nasseri, G. Bersuker, Muhammad Mustafa Hussain

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We report the impact of mechanical anomaly on high-κ/metal-oxide-semiconductor capacitors built on flexible silicon (100) fabric. The mechanical tests include studying the effect of bending radius up to 5 mm minimum bending radius with respect to breakdown voltage and leakage current of the devices. We also report the effect of continuous mechanical stress on the breakdown voltage over extended periods of times.
Original languageEnglish (US)
Pages (from-to)234104
JournalApplied Physics Letters
Issue number23
StatePublished - Jun 9 2014

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