Abstract
Bilayer poly(3-hexylthiophene):[6,6]-phenyl C61-butyric acid methyl ester (PC61BM) [P3HT:PC61BM] organic field-effect transistors (OFETs) have been fabricated using a bottom-contact, bottom-gate (BCBG) architecture. By annealing these devices and monitoring the magnitude of the electron field-effect mobility, information about the diffusion properties of PC61BM in P3HT can be obtained. Using a solution to the one-dimensional diffusion equation and an application of percolation theory, a relationship between electron field-effect mobility, diffusion coefficient, and annealing time has been obtained. By applying this model to time-dependent mobility measurements, a rough approximation of 5 nm2s-1 has been made for the diffusion coefficient of PC61BM in P3HT at a temperature of 130°C.
Original language | English (US) |
---|---|
Article number | 075344 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 84 |
Issue number | 7 |
DOIs | |
State | Published - Aug 18 2011 |
Externally published | Yes |
Bibliographical note
Generated from Scopus record by KAUST IRTS on 2019-11-27ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics