Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets

Daniel L. Becerra; Leah Y. Kuritzky; Joseph Nedy; Arwa Saud Abbas; Arash Pourhashemi; Robert M. Farrell; Daniel A. Cohen; Steven P. DenBaars; James S. Speck; Shuji Nakamura

doi:10.1063/1.4943143

Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets

Daniel L. Becerra, Leah Y. Kuritzky, Joseph Nedy, Arwa Saud Abbas, Arash Pourhashemi, Robert M. Farrell, Daniel A. Cohen, Steven P. DenBaars, James S. Speck, Shuji Nakamura

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

Original language	English (US)
Pages (from-to)	091106
Journal	APPLIED PHYSICS LETTERS
Volume	108
Issue number	9
DOIs	https://doi.org/10.1063/1.4943143
State	Published - Mar 2 2016
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2022-05-31
Acknowledgements: This work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4943143

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Becerra, D. L., Kuritzky, L. Y., Nedy, J., Abbas, A. S., Pourhashemi, A., Farrell, R. M., Cohen, D. A., DenBaars, S. P., Speck, J. S., & Nakamura, S. (2016). Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets. APPLIED PHYSICS LETTERS, 108(9), 091106. https://doi.org/10.1063/1.4943143

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title = "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets",

abstract = "Continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.",

author = "Becerra, {Daniel L.} and Kuritzky, {Leah Y.} and Joseph Nedy and Abbas, {Arwa Saud} and Arash Pourhashemi and Farrell, {Robert M.} and Cohen, {Daniel A.} and DenBaars, {Steven P.} and Speck, {James S.} and Shuji Nakamura",

note = "KAUST Repository Item: Exported on 2022-05-31 Acknowledgements: This work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

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month = mar,

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Becerra, DL, Kuritzky, LY, Nedy, J, Abbas, AS, Pourhashemi, A, Farrell, RM, Cohen, DA, DenBaars, SP, Speck, JS & Nakamura, S 2016, 'Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets', APPLIED PHYSICS LETTERS, vol. 108, no. 9, pp. 091106. https://doi.org/10.1063/1.4943143

Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets. / Becerra, Daniel L.; Kuritzky, Leah Y.; Nedy, Joseph et al.
In: APPLIED PHYSICS LETTERS, Vol. 108, No. 9, 02.03.2016, p. 091106.

Research output: Contribution to journal › Article › peer-review

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T1 - Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets

AU - Becerra, Daniel L.

AU - Kuritzky, Leah Y.

AU - Nedy, Joseph

AU - Abbas, Arwa Saud

AU - Pourhashemi, Arash

AU - Farrell, Robert M.

AU - Cohen, Daniel A.

AU - DenBaars, Steven P.

AU - Speck, James S.

AU - Nakamura, Shuji

N1 - KAUST Repository Item: Exported on 2022-05-31 Acknowledgements: This work was supported in part by the KACST-KAUST-UCSB Solid State Lighting Program and by the Solid State Lighting and Energy Electronics Center (SSLEEC) at UCSB. A portion of this work was done in the UCSB nanofabrication facility, part of the National Science Foundation funded NNIN. This work made use of MRL Central Facilities supported by the MRSEC Program of the National Science Foundation under Award No. DMR05-20415. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2016/3/2

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N2 - Continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

AB - Continuous-wave blue semipolar (20 2 ¯ 1 ¯) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm-1 and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 μm to 1800 μm, with threshold current densities ranging from 3 kA/cm2 to 9 kA/cm2 and threshold voltages ranging from 5.5 V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm-1 using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed.

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UR - http://aip.scitation.org/doi/10.1063/1.4943143

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U2 - 10.1063/1.4943143

DO - 10.1063/1.4943143

M3 - Article

SN - 1077-3118

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SP - 091106

JO - APPLIED PHYSICS LETTERS

JF - APPLIED PHYSICS LETTERS

IS - 9

ER -

Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (2021) III-nitride laser diodes with chemically assisted ion beam etched facets

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