Mathematical Modeling of Contact Resistance in Silicon Photovoltaic Cells

J. P. Black, C. J. W. Breward, P. D. Howell, R. J. S. Young

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


In screen-printed silicon-crystalline solar cells, the contact resistance of a thin interfacial glass layer between the silicon and the silver electrode plays a limiting role for electron transport. We analyze a simple model for electron transport across this layer, based on the driftdiffusion equations. We utilize the size of the current/Debye length to conduct asymptotic techniques to simplify the model; we solve the model numerically to find that the effective contact resistance may be a monotonic increasing, monotonic decreasing, or nonmonotonic function of the electron flux, depending on the values of the physical parameters. © 2013 Society for Industrial and Applied Mathematics.
Original languageEnglish (US)
Pages (from-to)1906-1925
Number of pages20
JournalSIAM Journal on Applied Mathematics
Issue number5
StatePublished - Oct 22 2013
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUK-C1-013-04
Acknowledgements: Received by the editors March 5, 2013; accepted for publication (in revised form) July 16, 2013; published electronically October 22, 2013. This work was supported by EPSRC and DuPont (UK) Ltd. through mathematics CASE award BK/10/040. This work was also partially supported by Award KUK-C1-013-04 made by King Abdullah University of Science and Technology (KAUST).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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