Materials Processing Routes to Trap-Free Halide Perovskites

Andrei Buin; Patrick Pietsch; Jixian Xu; Oleksandr Voznyy; Alexander H. Ip; Riccardo Comin; Edward H. Sargent

doi:10.1021/nl502612m

Materials Processing Routes to Trap-Free Halide Perovskites

Andrei Buin, Patrick Pietsch, Jixian Xu, Oleksandr Voznyy, Alexander H. Ip, Riccardo Comin, Edward H. Sargent

Research output: Contribution to journal › Article › peer-review

679 Scopus citations

Abstract

© 2014 American Chemical Society. Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.

Original language	English (US)
Pages (from-to)	6281-6286
Number of pages	6
Journal	Nano Letters
Volume	14
Issue number	11
DOIs	https://doi.org/10.1021/nl502612m
State	Published - Oct 13 2014
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledged KAUST grant number(s): KUS-11-009-21
Acknowledgements: This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. Computations were performed on the Southern Ontario Smart Computing Innovation Platform (SOSCIP) Blue Gene/Q supercomputer located at the University of Toronto's SciNet50 HPC facility. The SOS CIF multiuniversity/industry consortium is funded by the Ontario Government and the Federal SciNet is funded by the Canada Foundation for Innovation under the auspices of Compute Canada; the Government of Ontario; Ontario Research Fund-Research Excellence; and the University of Toronto. We thank Dr. Pongsakorn Kanjanaboos for AFM images and Dr. Zhijun Ning and Dr. Mingjian Yuan for the fruitful discussions.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/nl502612m

Cite this

@article{ef8f7d523abc4bb596f5ab91c2bf68a4,

title = "Materials Processing Routes to Trap-Free Halide Perovskites",

abstract = "{\textcopyright} 2014 American Chemical Society. Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.",

author = "Andrei Buin and Patrick Pietsch and Jixian Xu and Oleksandr Voznyy and Ip, {Alexander H.} and Riccardo Comin and Sargent, {Edward H.}",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. Computations were performed on the Southern Ontario Smart Computing Innovation Platform (SOSCIP) Blue Gene/Q supercomputer located at the University of Toronto's SciNet50 HPC facility. The SOS CIF multiuniversity/industry consortium is funded by the Ontario Government and the Federal SciNet is funded by the Canada Foundation for Innovation under the auspices of Compute Canada; the Government of Ontario; Ontario Research Fund-Research Excellence; and the University of Toronto. We thank Dr. Pongsakorn Kanjanaboos for AFM images and Dr. Zhijun Ning and Dr. Mingjian Yuan for the fruitful discussions. This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2014",

month = oct,

day = "13",

doi = "10.1021/nl502612m",

language = "English (US)",

volume = "14",

pages = "6281--6286",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Materials Processing Routes to Trap-Free Halide Perovskites

AU - Buin, Andrei

AU - Pietsch, Patrick

AU - Xu, Jixian

AU - Voznyy, Oleksandr

AU - Ip, Alexander H.

AU - Comin, Riccardo

AU - Sargent, Edward H.

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledged KAUST grant number(s): KUS-11-009-21 Acknowledgements: This publication is based in part on work supported by Award KUS-11-009-21, made by King Abdullah University of Science and Technology (KAUST), by the Ontario Research Fund Research Excellence Program, and by the Natural Sciences and Engineering Research Council (NSERC) of Canada. Computations were performed on the Southern Ontario Smart Computing Innovation Platform (SOSCIP) Blue Gene/Q supercomputer located at the University of Toronto's SciNet50 HPC facility. The SOS CIF multiuniversity/industry consortium is funded by the Ontario Government and the Federal SciNet is funded by the Canada Foundation for Innovation under the auspices of Compute Canada; the Government of Ontario; Ontario Research Fund-Research Excellence; and the University of Toronto. We thank Dr. Pongsakorn Kanjanaboos for AFM images and Dr. Zhijun Ning and Dr. Mingjian Yuan for the fruitful discussions. This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2014/10/13

Y1 - 2014/10/13

N2 - © 2014 American Chemical Society. Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.

AB - © 2014 American Chemical Society. Photovoltaic devices based on lead iodide perovskite films have seen rapid advancements, recently achieving an impressive 17.9% certified solar power conversion efficiency. Reports have consistently emphasized that the specific choice of growth conditions and chemical precursors is central to achieving superior performance from these materials; yet the roles and mechanisms underlying the selection of materials processing route is poorly understood. Here we show that films grown under iodine-rich conditions are prone to a high density of deep electronic traps (recombination centers), while the use of a chloride precursor avoids the formation of key defects (Pb atom substituted by I) responsible for short diffusion lengths and poor photovoltaic performance. Furthermore, the lowest-energy surfaces of perovskite crystals are found to be entirely trap-free, preserving both electron and hole delocalization to a remarkable degree, helping to account for explaining the success of polycrystalline perovskite films. We construct perovskite films from I-poor conditions using a lead acetate precursor, and our measurement of a long (600 ± 40 nm) diffusion length confirms this new picture of the importance of growth conditions.

UR - http://hdl.handle.net/10754/598763

UR - https://pubs.acs.org/doi/10.1021/nl502612m

UR - http://www.scopus.com/inward/record.url?scp=84910117710&partnerID=8YFLogxK

U2 - 10.1021/nl502612m

DO - 10.1021/nl502612m

M3 - Article

C2 - 25296282

SN - 1530-6984

VL - 14

SP - 6281

EP - 6286

JO - Nano Letters

JF - Nano Letters

IS - 11

ER -

Materials Processing Routes to Trap-Free Halide Perovskites

Abstract

Bibliographical note

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this