Manganite thin film/ZnO nanowire (nanosheets) p-n junctions

Zhou Zhang*, Yinghui Sun, Yonggang Zhao, Gongping Li, Tom Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


We have fabricated p -type La0.7 Sr0.3 Mn O3 thin film/ n -type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices.

Original languageEnglish (US)
Article number103113
JournalApplied Physics Letters
Issue number10
StatePublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Manganite thin film/ZnO nanowire (nanosheets) p-n junctions'. Together they form a unique fingerprint.

Cite this