Manganite thin film/ZnO nanowire (nanosheets) p-n junctions

Zhou Zhang; Yinghui Sun; Yonggang Zhao; Gongping Li; Tom Wu

doi:10.1063/1.2896307

Manganite thin film/ZnO nanowire (nanosheets) p-n junctions

Zhou Zhang^*, Yinghui Sun, Yonggang Zhao, Gongping Li, Tom Wu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

We have fabricated p -type La0.7 Sr0.3 Mn O3 thin film/ n -type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices.

Original language	English (US)
Article number	103113
Journal	Applied Physics Letters
Volume	92
Issue number	10
DOIs	https://doi.org/10.1063/1.2896307
State	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Manganite thin film/ZnO nanowire (nanosheets) p-n junctions",

abstract = "We have fabricated p -type La0.7 Sr0.3 Mn O3 thin film/ n -type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices.",

author = "Zhou Zhang and Yinghui Sun and Yonggang Zhao and Gongping Li and Tom Wu",

year = "2008",

doi = "10.1063/1.2896307",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Manganite thin film/ZnO nanowire (nanosheets) p-n junctions

AU - Zhang, Zhou

AU - Sun, Yinghui

AU - Zhao, Yonggang

AU - Li, Gongping

AU - Wu, Tom

PY - 2008

Y1 - 2008

N2 - We have fabricated p -type La0.7 Sr0.3 Mn O3 thin film/ n -type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices.

AB - We have fabricated p -type La0.7 Sr0.3 Mn O3 thin film/ n -type ZnO nanowires (nanosheets) heterostructures. A lower-temperature growth with Zn source and a higher-temperature growth with ZnO/graphite source led to the formations of nanowires and nanosheets, respectively. While the nanosheets showed an epitaxial relationship with the manganite film, the high processing temperature resulted in interfacial diffusion and reaction, which were reflected in the x-ray diffraction, magnetic, and electrical transport measurements. The manganite thin film/ZnO nanowires (nanosheets) p-n junctions exhibited good rectification behaviors. Such heterostructures are promising to find potential applications in electronic and spintronic devices.

UR - http://www.scopus.com/inward/record.url?scp=40849098754&partnerID=8YFLogxK

U2 - 10.1063/1.2896307

DO - 10.1063/1.2896307

M3 - Article

AN - SCOPUS:40849098754

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 103113

ER -

Manganite thin film/ZnO nanowire (nanosheets) p-n junctions

Abstract

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