TY - GEN
T1 - Magnetoresistance of cylindrical nanowires with artificial pinning site
AU - Vidal, Enrique Vilanova
AU - Alanazy, Mohammed H.
AU - Ivanov, I.
AU - Kosel, Jürgen
N1 - KAUST Repository Item: Exported on 2020-10-01
PY - 2015/5
Y1 - 2015/5
N2 - New concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
AB - New concepts of magnetic memory devices are exploiting the movement of data bits by current induced domain wall motion. This concept has been widely explored with rectangular nanowires (NWs) or stripes both theoretically and experimentally [1]. In the case of cylindrical NWs not much progress has been made on the experimental side, despite its promising advantages like the absence of Walker breakdown [2].
UR - http://hdl.handle.net/10754/577120
UR - http://ieeexplore.ieee.org/document/7157068/
UR - http://www.scopus.com/inward/record.url?scp=84942475263&partnerID=8YFLogxK
U2 - 10.1109/INTMAG.2015.7157068
DO - 10.1109/INTMAG.2015.7157068
M3 - Conference contribution
SN - 9781479973224
BT - 2015 IEEE Magnetics Conference (INTERMAG)
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -