Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

Z. B. Guo*, J. J. Qiu, Y. K. Zheng, G. C. Han, K. B. Li, P. Luo, Y. H. Wu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.

Original languageEnglish (US)
Title of host publicationINTERMAG Europe 2002 - IEEE International Magnetics Conference
EditorsJ. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)0780373650, 9780780373655
StatePublished - 2002
Externally publishedYes
Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands
Duration: Apr 28 2002May 2 2002

Publication series

NameINTERMAG Europe 2002 - IEEE International Magnetics Conference


Other2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Bibliographical note

Publisher Copyright:
©2002 IEEE.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering
  • Surfaces, Coatings and Films


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