Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

Z. B. Guo; J. J. Qiu; Y. K. Zheng; G. C. Han; K. B. Li; P. Luo; Y. H. Wu

doi:10.1109/INTMAG.2002.1001196

Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

Z. B. Guo^*, J. J. Qiu, Y. K. Zheng, G. C. Han, K. B. Li, P. Luo, Y. H. Wu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.

Original language	English (US)
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001196
State	Published - 2002
Externally published	Yes
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

Publication series

Name	INTERMAG Europe 2002 - IEEE International Magnetics Conference

Other

Other	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	04/28/02 → 05/2/02

Bibliographical note

Publisher Copyright:
©2002 IEEE.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Surfaces, Coatings and Films

Access to Document

10.1109/INTMAG.2002.1001196

Cite this

Guo, Z. B., Qiu, J. J., Zheng, Y. K., Han, G. C., Li, K. B., Luo, P., & Wu, Y. H. (2002). Magnetoresistance in exchange-biased IrMn/NiFe/FeMn. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1001196 (INTERMAG Europe 2002 - IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001196

Guo, Z. B. ; Qiu, J. J. ; Zheng, Y. K. et al. / Magnetoresistance in exchange-biased IrMn/NiFe/FeMn. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

@inproceedings{83d75f2b3b9e4357b1b6f40b6f17e76b,

title = "Magnetoresistance in exchange-biased IrMn/NiFe/FeMn",

abstract = "Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.",

author = "Guo, {Z. B.} and Qiu, {J. J.} and Zheng, {Y. K.} and Han, {G. C.} and Li, {K. B.} and P. Luo and Wu, {Y. H.}",

note = "Publisher Copyright: {\textcopyright}2002 IEEE.; 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2002",

doi = "10.1109/INTMAG.2002.1001196",

language = "English (US)",

series = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and {Vazquez Villalabeitia}, M. and Bain, {J. A.} and {De Boeck}, Jo and R. Wood",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

address = "United States",

}

Guo, ZB, Qiu, JJ, Zheng, YK, Han, GC, Li, KB, Luo, P & Wu, YH 2002, Magnetoresistance in exchange-biased IrMn/NiFe/FeMn. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001196, INTERMAG Europe 2002 - IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 04/28/02. https://doi.org/10.1109/INTMAG.2002.1001196

Magnetoresistance in exchange-biased IrMn/NiFe/FeMn. / Guo, Z. B.; Qiu, J. J.; Zheng, Y. K. et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. 1001196 (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

AU - Guo, Z. B.

AU - Qiu, J. J.

AU - Zheng, Y. K.

AU - Han, G. C.

AU - Li, K. B.

AU - Luo, P.

AU - Wu, Y. H.

PY - 2002

Y1 - 2002

N2 - Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.

AB - Over the past few years, the influence of magnetic domain walls on transport properties has attracted great interest. In this paper, we fabricated a series of samples of IrMn(20nm)/NiFe(t nm)/FeMn(20nm) with t = 5, 10, 20, 50, and 80nm. The films were deposited under a magnetic field of 100Oe and then annealed at 250°C to induce the exchange bias of IrMn/NiFe and NiFe/FeMn parallel to each other. After that, the samples were annealed at 155°C under a reversed magnetic field of -1 Tesla, which reversed the exchange bias direction of NiFe/FeMn resulting in the exchange bias of NiFe/FeMn antiparallel to that of IrMn/NiFe.

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U2 - 10.1109/INTMAG.2002.1001196

DO - 10.1109/INTMAG.2002.1001196

M3 - Conference contribution

AN - SCOPUS:85017249795

T3 - INTERMAG Europe 2002 - IEEE International Magnetics Conference

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

A2 - Fidler, J.

A2 - Hillebrands, B.

A2 - Ross, C.

A2 - Weller, D.

A2 - Folks, L.

A2 - Hill, E.

A2 - Vazquez Villalabeitia, M.

A2 - Bain, J. A.

A2 - De Boeck, Jo

A2 - Wood, R.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -

Guo ZB, Qiu JJ, Zheng YK, Han GC, Li KB, Luo P et al. Magnetoresistance in exchange-biased IrMn/NiFe/FeMn. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2002. 1001196. (INTERMAG Europe 2002 - IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2002.1001196

Magnetoresistance in exchange-biased IrMn/NiFe/FeMn

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