Magnetoresistance in exchange-biased IRMN/NIFE/FEMN

Zaibing Guo; J. J. Qiu; Y. K. Zheng; G. C. Han; K. B. Li; P. Luo; Y. H. Wu

Magnetoresistance in exchange-biased IRMN/NIFE/FEMN

Zaibing Guo^*, J. J. Qiu, Y. K. Zheng, G. C. Han, K. B. Li, P. Luo, Y. H. Wu

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.

Original language	English (US)
Journal	Digests of the Intermag Conference
State	Published - Dec 1 2002
Event	2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Magnetoresistance in exchange-biased IRMN/NIFE/FEMN",

abstract = "A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.",

author = "Zaibing Guo and Qiu, {J. J.} and Zheng, {Y. K.} and Han, {G. C.} and Li, {K. B.} and P. Luo and Wu, {Y. H.}",

year = "2002",

month = dec,

day = "1",

language = "English (US)",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG ; Conference date: 28-04-2002 Through 02-05-2002",

}

TY - JOUR

T1 - Magnetoresistance in exchange-biased IRMN/NIFE/FEMN

AU - Guo, Zaibing

AU - Qiu, J. J.

AU - Zheng, Y. K.

AU - Han, G. C.

AU - Li, K. B.

AU - Luo, P.

AU - Wu, Y. H.

PY - 2002/12/1

Y1 - 2002/12/1

N2 - A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.

AB - A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.

UR - http://www.scopus.com/inward/record.url?scp=0036917080&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036917080

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

SN - 0074-6843

T2 - 2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG

Y2 - 28 April 2002 through 2 May 2002

ER -

Magnetoresistance in exchange-biased IRMN/NIFE/FEMN

Abstract

ASJC Scopus subject areas

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