A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.
|Original language||English (US)|
|Journal||Digests of the Intermag Conference|
|State||Published - Dec 1 2002|
|Event||2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands|
Duration: Apr 28 2002 → May 2 2002
ASJC Scopus subject areas
- Electrical and Electronic Engineering