Magnetoresistance in exchange-biased IRMN/NIFE/FEMN

Zaibing Guo*, J. J. Qiu, Y. K. Zheng, G. C. Han, K. B. Li, P. Luo, Y. H. Wu

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review


    A report on the magnetoresistance in exchange-biased IrMn/NiFe/FeMn was presented. The films were deposited under a magnetic field of 100Oe and then annealed at 250 °C. The representative magnetoresistance behavior of the samples measured with an applied magnetic field parallel to currents as well as exchange bias directions were shown.

    Original languageEnglish (US)
    JournalDigests of the Intermag Conference
    StatePublished - Dec 1 2002
    Event2002 IEEE International Magnetics Conference-2002 IEEE INTERMAG - Amsterdam, Netherlands
    Duration: Apr 28 2002May 2 2002

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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