Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Xiaofei Duan, Wenbo Mi, Zaibing Guo, Haili Bai

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.
Original languageEnglish (US)
Pages (from-to)348-354
Number of pages7
JournalThin Solid Films
StatePublished - Sep 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).

ASJC Scopus subject areas

  • Materials Chemistry
  • Surfaces and Interfaces
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Metals and Alloys


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