Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Xiaofei Duan; Wenbo Mi; Zaibing Guo; Haili Bai

doi:10.1016/j.tsf.2013.06.068

Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Xiaofei Duan, Wenbo Mi, Zaibing Guo, Haili Bai

Imaging & Characterization Core Lab

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

Original language	English (US)
Pages (from-to)	348-354
Number of pages	7
Journal	Thin Solid Films
Volume	542
DOIs	https://doi.org/10.1016/j.tsf.2013.06.068
State	Published - Sep 2013

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).

ASJC Scopus subject areas

Materials Chemistry
Surfaces and Interfaces
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films
Metals and Alloys

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title = "Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films",

abstract = "The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. {\textcopyright} 2013 Elsevier B.V. All rights reserved.",

author = "Xiaofei Duan and Wenbo Mi and Zaibing Guo and Haili Bai",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).",

year = "2013",

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doi = "10.1016/j.tsf.2013.06.068",

language = "English (US)",

volume = "542",

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T1 - Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

AU - Duan, Xiaofei

AU - Mi, Wenbo

AU - Guo, Zaibing

AU - Bai, Haili

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).

PY - 2013/9

Y1 - 2013/9

N2 - The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

AB - The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.

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DO - 10.1016/j.tsf.2013.06.068

M3 - Article

SN - 0040-6090

VL - 542

SP - 348

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JO - Thin Solid Films

JF - Thin Solid Films

ER -

Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Abstract

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