Magnetic Sensitivity Distribution of Hall Devices in Antiferromagnetic Switching Experiments

F. Schreiber, H. Meer, C. Schmitt, R. Ramos, E. Saitoh, L. Baldrati, Mathias Kläui

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We analyze the complex impact of the local magnetic spin texture on the transverse Hall-type voltage in device structures utilized to measure magnetoresistance effects. We find a highly localized and asymmetric magnetic sensitivity in the eight-terminal geometries that are frequently used in current-induced switching experiments, for instance, to probe antiferromagnetic materials. Using current-induced switching of antiferromagnetic NiO/Pt as an example, we estimate the change in the spin Hall magnetoresistance signal associated with switching events based on the domain-switching patterns observed via direct imaging. This estimate correlates with the actual electrical data after subtraction of a nonmagnetic contribution. Here, the consistency of the correlation across three measurement geometries with fundamentally different switching patterns strongly indicates a magnetic origin of the measured and analyzed electrical signals.
Original languageEnglish (US)
JournalPhysical Review Applied
Issue number6
StatePublished - Dec 9 2021
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2021-12-15
Acknowledged KAUST grant number(s): OSR-2019-CRG8-4048
Acknowledgements: L.B. acknowledges the European Union’s Horizon 2020 research and innovation program under Marie Skłodowska-Curie Grant Agreement ARTES No. 793159. L.B. and M.K. acknowledge support from the Graduate School of Excellence Materials Science in Mainz
(MAINZ) DFG 266, the DAAD (Spintronics network Project No. 57334897 and Insulator Spin-Orbitronics Project No. 57524834), and all groups from Mainz acknowledge that this work is funded by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) TRR 173–268565370 (Projects A01, A03, A11, B02, and B12) and KAUST (OSR-2019-CRG8-4048).
R.R. also acknowledges support from the European Commission through Project No. 734187-SPICOLOST (H2020-MSCA-RISE-2016), the European Union’s Horizon 2020 research and innovation program through Marie Skłodowska-Curie Actions Grant Agreement SPEC No.
894006, the MCIN/AEI (RYC 2019-026915-I), the Xunta de Galicia (ED431B 2021/013, Centro Singular De Investigación de Galicia Accreditation 2019-2022, ED431G 2019/03) and the European Union (European Regional Development Fund - ERDF). M.K. acknowledges financial support from the Horizon 2020 Framework Programme of the European Commission under FET-Open Grant Agreement No. 863155 (s-Nebula) and the Research Council of Norway through its Centers of Excellence funding scheme, Project No. 262633 “QuSpin.” This work is also supported by ERATO “Spin Quantum Rectification Project” (Grant No. JPMJER1402) and the Grant-in-Aid for Scientific Research on Innovative Area, “Nano Spin Conversion Science” (Grant No. JP26103005), Grant-in-Aid for Scientific Research (S) (Grant No. JP19H05600), and Grant-in-Aid for Scientific Research (C) (Grant No. JP20K05297) from JSPS KAKENHI, Japan.
L.B. and M.K. proposed and supervised the project. F.S. performed the simulations with input from H.M. and carried out the experiments. The devices were designed and fabricated by L.B. and H.M. The antiferromagnetic thinfilm bilayers were grown by C.S. and R.R. with input
from L.B. and supervised by E.S. F.S. wrote the paper with L.B., H.M., and M.K. All authors commented on the manuscript.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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