Magnetic properties of Ni1-xMnxO diluted magnetic semiconductor

Chao Wang*, Dexiong Hong, Xiaoyu Yang, Mingliang Fang, Liang Cai, Ling Chen, Wensheng Yan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


The microstructural and magnetic properties of Ni1-xMnxO(0. 01≤x≤0.05) thin films prepared by pulsed laser deposition (PLD) were studied by combining X-ray absorption near edge structure (XANES) spectroscopy, superconducting quantum interference device (SQUID) and first-principles calculations. XANES results at Mn K-edge show that at the low Mn doping level of x≤0. 03, the Mn ions in the mixed oxidation valence state (+ 2/ +3) are incorporated substitutionally into the NiO host, while at higher doping level of x>0. 03 Mn2O3-like impurity phase is formed. Magnetization measurements indicate that the saturation magnetic moment of Ni1-xMnxO film increases from 0. 3 to 0. 45 μB/Mn as the Mn content rises from 0. 01 to 0. 03. It is proposed that interactions between Mn3+ ions mediated by Ni vacancies exhibit ferromagnetic coupling, while interactions between Mn2+ ions exhibit antiferromagnetic coupling through superexchange interaction.

Original languageChinese (Traditional)
Pages (from-to)667-671
Number of pages5
JournalJournal of University of Science and Technology of China
Issue number8
StatePublished - 2014


  • Mn-doped NiO
  • Room temperature ferromagnetism
  • XAFS

ASJC Scopus subject areas

  • Mechanical Engineering

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