Magnetic doping and characterization of n-type GaN

X. M. Cai; A. B. Djurišić; M. H. Xie; H. Liu; X. X. Zhang; J. J. Zhu; H. Yang; Y. H. Leung

doi:10.1063/1.1994117

Magnetic doping and characterization of n-type GaN

X. M. Cai^*, A. B. Djurišić, M. H. Xie, H. Liu, X. X. Zhang, J. J. Zhu, H. Yang, Y. H. Leung

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed.

Original language	English (US)
Title of host publication	PHYSICS OF SEMICONDUCTORS
Subtitle of host publication	27th International Conference on the Physics of Semiconductors, ICPS-27
Pages	319-320
Number of pages	2
DOIs	https://doi.org/10.1063/1.1994117
State	Published - Jun 30 2005
Externally published	Yes
Event	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States Duration: Jul 26 2004 → Jul 30 2004

Publication series

Name	AIP Conference Proceedings
Volume	772
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Other

Other	PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
Country/Territory	United States
City	Flagstaff, AZ
Period	07/26/04 → 07/30/04

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.1994117

Cite this

@inproceedings{f30b3ecc786a40c39ccd4f4512768f58,

title = "Magnetic doping and characterization of n-type GaN",

abstract = "n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed.",

author = "Cai, {X. M.} and Djuri{\v s}i{\'c}, {A. B.} and Xie, {M. H.} and H. Liu and Zhang, {X. X.} and Zhu, {J. J.} and H. Yang and Leung, {Y. H.}",

year = "2005",

month = jun,

day = "30",

doi = "10.1063/1.1994117",

language = "English (US)",

isbn = "0735402574",

series = "AIP Conference Proceedings",

pages = "319--320",

booktitle = "PHYSICS OF SEMICONDUCTORS",

note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",

}

Cai, XM, Djurišić, AB, Xie, MH, Liu, H, Zhang, XX, Zhu, JJ, Yang, H & Leung, YH 2005, Magnetic doping and characterization of n-type GaN. in PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27. AIP Conference Proceedings, vol. 772, pp. 319-320, PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ, United States, 07/26/04. https://doi.org/10.1063/1.1994117

TY - GEN

T1 - Magnetic doping and characterization of n-type GaN

AU - Cai, X. M.

AU - Djurišić, A. B.

AU - Xie, M. H.

AU - Liu, H.

AU - Zhang, X. X.

AU - Zhu, J. J.

AU - Yang, H.

AU - Leung, Y. H.

PY - 2005/6/30

Y1 - 2005/6/30

N2 - n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed.

AB - n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and characterized by various methods. Hall measurement shows that the samples still remain n-type after the diffusion. Secondary Ion Mass Spectroscopy (SIMS) results show a good diffusion of Mn and Cr inside GaN. X-ray diffraction (XRD) reveals no secondary phases in the samples. Superconducting quantum interference device (SQUID) results show that the samples are ferromagnetic up to room temperature. The possible origin of ferromagnetism is discussed.

UR - http://www.scopus.com/inward/record.url?scp=33749522012&partnerID=8YFLogxK

U2 - 10.1063/1.1994117

DO - 10.1063/1.1994117

M3 - Conference contribution

AN - SCOPUS:33749522012

SN - 0735402574

SN - 9780735402577

T3 - AIP Conference Proceedings

SP - 319

EP - 320

BT - PHYSICS OF SEMICONDUCTORS

T2 - PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27

Y2 - 26 July 2004 through 30 July 2004

ER -

Magnetic doping and characterization of n-type GaN

Abstract

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