Luminescence spectroscopy of Eu-implanted zincblende GaN

I. S. Roqan; K. P. O'Donnell; C. Trager-Cowan; B. Hourahine; R. W. Martin; K. Lorenz; E. Alves; D. J. As; M. Panfilova; I. M. Watson

doi:10.1002/pssb.200743372

Luminescence spectroscopy of Eu-implanted zincblende GaN

I. S. Roqan^*, K. P. O'Donnell, C. Trager-Cowan, B. Hourahine, R. W. Martin, K. Lorenz, E. Alves, D. J. As, M. Panfilova, I. M. Watson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The Eu³⁺ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800°C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN:Eu.

Original language	English (US)
Pages (from-to)	170-173
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	245
Issue number	1
DOIs	https://doi.org/10.1002/pssb.200743372
State	Published - Jan 2008
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Luminescence spectroscopy of Eu-implanted zincblende GaN",

abstract = "Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The Eu3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800°C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN:Eu.",

author = "Roqan, {I. S.} and O'Donnell, {K. P.} and C. Trager-Cowan and B. Hourahine and Martin, {R. W.} and K. Lorenz and E. Alves and As, {D. J.} and M. Panfilova and Watson, {I. M.}",

year = "2008",

month = jan,

doi = "10.1002/pssb.200743372",

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volume = "245",

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T1 - Luminescence spectroscopy of Eu-implanted zincblende GaN

AU - Roqan, I. S.

AU - O'Donnell, K. P.

AU - Trager-Cowan, C.

AU - Hourahine, B.

AU - Martin, R. W.

AU - Lorenz, K.

AU - Alves, E.

AU - As, D. J.

AU - Panfilova, M.

AU - Watson, I. M.

PY - 2008/1

Y1 - 2008/1

N2 - Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The Eu3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800°C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN:Eu.

AB - Cathodoluminescence (CL) and Photoluminescence (PL) of Eu-implanted zincblende-GaN (ZB-GaN:Eu) and wurtzite-GaN (W-GaN:Eu) are compared in order to investigate the optical activation of GaN by Eu. The Eu3+ emission spectrum depends critically on the crystal structure of the GaN host; implantation and post-annealing at 800°C partially converts implantation-damaged ZB-GaN:Eu to W-GaN:Eu. Selective excitation of PL at wavelengths below the ZB-GaN band edge reveals a new sharp emission line at 627 nm, together with a number of satellites, which we ascribe to ZB-GaN:Eu.

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DO - 10.1002/pssb.200743372

M3 - Article

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JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

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Luminescence spectroscopy of Eu-implanted zincblende GaN

Abstract

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