We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.
|Original language||English (US)|
|Number of pages||5|
|Journal||ACS Applied Materials and Interfaces|
|State||Published - Jun 6 2018|
Bibliographical noteFunding Information:
This work is supported by a Durham Junior Research Fellowship COFUNDed between Durham University and the European Union (grant agreement no. 609412). M.U.C., C.P., C.G., and M.C.P thank the Institute of Advanced Study, Durham University for their support. K.T., Y.H.L., and T.D.A. acknowledge financial support from the People Programme (Marie Curie Actions) of the European Union’s Framework Programme Horizon 2020: ‘‘Flexible Complementary Hybrid Integrated Circuits’’ (FlexCHIC), grant agreement no. 658563. D.D.C.B. thanks the University of Oxford for start-up funding (grant no. DK3004), including a postdoctoral research fellowship for S.N.
Copyright © 2018 American Chemical Society.
- hybrid transistors
- light-emitting transistors
- metal oxide high-k dielectric
- solution-processed organic semiconductors
ASJC Scopus subject areas
- Materials Science(all)