Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry; Kornelius Tetzner; Yen Hung Lin; Sungho Nam; Christopher Pearson; Chris Groves; Michael C. Petty; Thomas D. Anthopoulos; Donal D.C. Bradley

doi:10.1021/acsami.8b06031

Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry^*, Kornelius Tetzner, Yen Hung Lin, Sungho Nam, Christopher Pearson, Chris Groves, Michael C. Petty, Thomas D. Anthopoulos, Donal D.C. Bradley

^*Corresponding author for this work

Physical Sciences and Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO_x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In₂O₃/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm²/(V s)) with appreciable current on/off ratios (≈10³) and an external quantum efficiency of 2 × 10^-2% at 700 cd/m². The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Original language	English (US)
Pages (from-to)	18445-18449
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	10
Issue number	22
DOIs	https://doi.org/10.1021/acsami.8b06031
State	Published - Jun 6 2018

Bibliographical note

Funding Information:
This work is supported by a Durham Junior Research Fellowship COFUNDed between Durham University and the European Union (grant agreement no. 609412). M.U.C., C.P., C.G., and M.C.P thank the Institute of Advanced Study, Durham University for their support. K.T., Y.H.L., and T.D.A. acknowledge financial support from the People Programme (Marie Curie Actions) of the European Union’s Framework Programme Horizon 2020: ‘‘Flexible Complementary Hybrid Integrated Circuits’’ (FlexCHIC), grant agreement no. 658563. D.D.C.B. thanks the University of Oxford for start-up funding (grant no. DK3004), including a postdoctoral research fellowship for S.N.

Publisher Copyright:
Copyright © 2018 American Chemical Society.

Keywords

hybrid transistors
light-emitting transistors
low-voltage
metal oxide high-k dielectric
solution-processed organic semiconductors

ASJC Scopus subject areas

Materials Science(all)

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10.1021/acsami.8b06031

Cite this

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title = "Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors",

abstract = "We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer {"}Super Yellow{"} acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.",

keywords = "hybrid transistors, light-emitting transistors, low-voltage, metal oxide high-k dielectric, solution-processed organic semiconductors",

author = "Chaudhry, {Mujeeb Ullah} and Kornelius Tetzner and Lin, {Yen Hung} and Sungho Nam and Christopher Pearson and Chris Groves and Petty, {Michael C.} and Anthopoulos, {Thomas D.} and Bradley, {Donal D.C.}",

note = "Funding Information: This work is supported by a Durham Junior Research Fellowship COFUNDed between Durham University and the European Union (grant agreement no. 609412). M.U.C., C.P., C.G., and M.C.P thank the Institute of Advanced Study, Durham University for their support. K.T., Y.H.L., and T.D.A. acknowledge financial support from the People Programme (Marie Curie Actions) of the European Union{\textquoteright}s Framework Programme Horizon 2020: {\textquoteleft}{\textquoteleft}Flexible Complementary Hybrid Integrated Circuits{\textquoteright}{\textquoteright} (FlexCHIC), grant agreement no. 658563. D.D.C.B. thanks the University of Oxford for start-up funding (grant no. DK3004), including a postdoctoral research fellowship for S.N. Publisher Copyright: Copyright {\textcopyright} 2018 American Chemical Society.",

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AU - Chaudhry, Mujeeb Ullah

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AU - Pearson, Christopher

AU - Groves, Chris

AU - Petty, Michael C.

AU - Anthopoulos, Thomas D.

AU - Bradley, Donal D.C.

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PY - 2018/6/6

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N2 - We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

AB - We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

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Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Abstract

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Keywords

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