Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry*, Kornelius Tetzner, Yen Hung Lin, Sungho Nam, Christopher Pearson, Chris Groves, Michael C. Petty, Thomas D. Anthopoulos, Donal D.C. Bradley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Original languageEnglish (US)
Pages (from-to)18445-18449
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number22
StatePublished - Jun 6 2018

Bibliographical note

Publisher Copyright:
Copyright © 2018 American Chemical Society.


  • hybrid transistors
  • light-emitting transistors
  • low-voltage
  • metal oxide high-k dielectric
  • solution-processed organic semiconductors

ASJC Scopus subject areas

  • General Materials Science


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