Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

Mujeeb Ullah Chaudhry*, Kornelius Tetzner, Yen Hung Lin, Sungho Nam, Christopher Pearson, Chris Groves, Michael C. Petty, Thomas D. Anthopoulos, Donal D.C. Bradley

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrOx gate dielectric and a hybrid multilayer channel consisting of the heterojunction In2O3/ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm2/(V s)) with appreciable current on/off ratios (≈103) and an external quantum efficiency of 2 × 10-2% at 700 cd/m2. The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

Original languageEnglish (US)
Pages (from-to)18445-18449
Number of pages5
JournalACS Applied Materials and Interfaces
Issue number22
StatePublished - Jun 6 2018

Bibliographical note

Funding Information:
This work is supported by a Durham Junior Research Fellowship COFUNDed between Durham University and the European Union (grant agreement no. 609412). M.U.C., C.P., C.G., and M.C.P thank the Institute of Advanced Study, Durham University for their support. K.T., Y.H.L., and T.D.A. acknowledge financial support from the People Programme (Marie Curie Actions) of the European Union’s Framework Programme Horizon 2020: ‘‘Flexible Complementary Hybrid Integrated Circuits’’ (FlexCHIC), grant agreement no. 658563. D.D.C.B. thanks the University of Oxford for start-up funding (grant no. DK3004), including a postdoctoral research fellowship for S.N.

Publisher Copyright:
Copyright © 2018 American Chemical Society.


  • hybrid transistors
  • light-emitting transistors
  • low-voltage
  • metal oxide high-k dielectric
  • solution-processed organic semiconductors

ASJC Scopus subject areas

  • Materials Science(all)


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