Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si

Chen Shang, Yating Wan, Justin C. Norman, Noelle Collins, Ian MacFarlane, Mario Dumont, Songtao Liu, Qiang Li, Kei M. Lau, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journalArticlepeer-review

26 Scopus citations


A three-fold reduction of threshold current, with a minimum threshold current density of 286 A/cm2, a maximum operating temperature of 80 °C, and a maximum 3-dB bandwidth of 5.8 GHz was achieved for 1.3-μm InAs quantum dot lasers on patterned, on-axis (001) Si. This was enabled by the reduced threading dislocation density (from 7 × 107 to 3 × 106 cm-2), and optimized probe design. The patterned Si produced antiphase domain free material in the coalesced GaAs buffer layer with reduced misfit/threading dislocation nucleation, without the use of Ge/GaP buffers or substrate miscut. Utilizing aspect ratio trapping, cyclic thermal annealing, and dislocation filter layers, high-quality III-V on Si devices were grown, demonstrating the compelling advantages of this patterned Si template for a monolithic Si photonics integration platform.
Original languageEnglish (US)
JournalIEEE Journal of Selected Topics in Quantum Electronics
Issue number6
StatePublished - Nov 1 2019
Externally publishedYes

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Generated from Scopus record by KAUST IRTS on 2023-09-18


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