Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers

Humberto M. Foronda, Feng Wu, Christian Zollner, Muhammad Esmed Alif, Burhan Saifaddin, Abdullah Almogbel, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck

Research output: Contribution to journalArticlepeer-review

20 Scopus citations


In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.
Original languageEnglish (US)
Pages (from-to)134-139
Number of pages6
JournalJournal of Crystal Growth
StatePublished - Nov 23 2017
Externally publishedYes

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was supported by the King Abdulaziz Center for Science and Technology and King Abdulaziz University of Science and Technology (KACST/KAUST) as well as the Materials Research Laboratory and California Nanosystems Institute at UC Santa Barbara. We would like to thank them for providing access and training to their laboratories.
This publication acknowledges KAUST support, but has no KAUST affiliated authors.


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