Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Luisa Petti; Hendrik Faber; Niko Münzenrieder; Giuseppe Cantarella; Panos A. Patsalas; Gerhard Tröster; Thomas D. Anthopoulos

doi:10.1063/1.4914085

Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Luisa Petti, Hendrik Faber, Niko Münzenrieder, Giuseppe Cantarella, Panos A. Patsalas, Gerhard Tröster, Thomas D. Anthopoulos^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

Indium oxide (In₂O₃) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm²V^-1s^-1 and 16 cm²V^-1s^-1 for coplanar and staggered architectures, respectively. Integration of In₂O₃ transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In₂O₃ also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In₂O₃ transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

Original language	English (US)
Article number	092105
Journal	Applied Physics Letters
Volume	106
Issue number	9
DOIs	https://doi.org/10.1063/1.4914085
State	Published - Mar 2 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4914085

Cite this

@article{eee1deb720e446c09d3ac09f37137d5b,

title = "Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits",

abstract = "Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V-1s-1 and 16 cm2V-1s-1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.",

author = "Luisa Petti and Hendrik Faber and Niko M{\"u}nzenrieder and Giuseppe Cantarella and Patsalas, {Panos A.} and Gerhard Tr{\"o}ster and Anthopoulos, {Thomas D.}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = mar,

day = "2",

doi = "10.1063/1.4914085",

language = "English (US)",

volume = "106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "9",

}

TY - JOUR

T1 - Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

AU - Petti, Luisa

AU - Faber, Hendrik

AU - Münzenrieder, Niko

AU - Cantarella, Giuseppe

AU - Patsalas, Panos A.

AU - Tröster, Gerhard

AU - Anthopoulos, Thomas D.

PY - 2015/3/2

Y1 - 2015/3/2

N2 - Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V-1s-1 and 16 cm2V-1s-1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

AB - Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V-1s-1 and 16 cm2V-1s-1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

UR - http://www.scopus.com/inward/record.url?scp=84924388355&partnerID=8YFLogxK

U2 - 10.1063/1.4914085

DO - 10.1063/1.4914085

M3 - Article

AN - SCOPUS:84924388355

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

M1 - 092105

ER -

Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this