Low-temperature spray-deposited indium oxide for flexible thin-film transistors and integrated circuits

Luisa Petti, Hendrik Faber, Niko Münzenrieder, Giuseppe Cantarella, Panos A. Patsalas, Gerhard Tröster, Thomas D. Anthopoulos*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


Indium oxide (In2O3) films were deposited by ultrasonic spray pyrolysis in ambient air and incorporated into bottom-gate coplanar and staggered thin-film transistors. As-fabricated devices exhibited electron-transporting characteristics with mobility values of 1 cm2V-1s-1 and 16 cm2V-1s-1 for coplanar and staggered architectures, respectively. Integration of In2O3 transistors enabled realization of unipolar inverters with high gain (5.3 V/V) and low-voltage operation. The low temperature deposition (≤250 °C) of In2O3 also allowed transistor fabrication on free-standing 50 μm-thick polyimide foils. The resulting flexible In2O3 transistors exhibit good characteristics and remain fully functional even when bent to tensile radii of 4 mm.

Original languageEnglish (US)
Article number092105
JournalApplied Physics Letters
Issue number9
StatePublished - Mar 2 2015
Externally publishedYes

Bibliographical note

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© 2015 AIP Publishing LLC.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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