Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection

Wei Cheng Lien*, Dung Sheng Tsai, Shu Hsien Chiu, Debbie G. Senesky, Roya Maboudian, Albert P. Pisano, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations


This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25°C and from 4.9 to 7.6 at 200°C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.

Original languageEnglish (US)
Article number6022746
Pages (from-to)1564-1566
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
StatePublished - Nov 2011
Externally publishedYes

Bibliographical note

Funding Information:
Manuscript received July 17, 2011; revised July 27, 2011; accepted August 2, 2011. Date of publication September 18, 2011; date of current version October 26, 2011. The research was supported by the National Science Council 99–2120-M-007–012, 99-2112-M-002–024-MY3 and 99-2622-E-002-019-CC3. W.-C. Lien and D.-S. Tsai contributed equally to this work. The review of this letter was arranged by Editor P. K.-L. Yu.


  • Nanowires
  • Photodetectors (PDs)
  • SiC
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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