Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection

Wei Cheng Lien; Dung Sheng Tsai; Shu Hsien Chiu; Debbie G. Senesky; Roya Maboudian; Albert P. Pisano; Jr Hau He

doi:10.1109/LED.2011.2164570

Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection

Wei Cheng Lien^*, Dung Sheng Tsai, Shu Hsien Chiu, Debbie G. Senesky, Roya Maboudian, Albert P. Pisano, Jr Hau He

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25°C and from 4.9 to 7.6 at 200°C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.

Original language	English (US)
Article number	6022746
Pages (from-to)	1564-1566
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	11
DOIs	https://doi.org/10.1109/LED.2011.2164570
State	Published - Nov 2011
Externally published	Yes

Bibliographical note

Funding Information:
Manuscript received July 17, 2011; revised July 27, 2011; accepted August 2, 2011. Date of publication September 18, 2011; date of current version October 26, 2011. The research was supported by the National Science Council 99–2120-M-007–012, 99-2112-M-002–024-MY3 and 99-2622-E-002-019-CC3. W.-C. Lien and D.-S. Tsai contributed equally to this work. The review of this letter was arranged by Editor P. K.-L. Yu.

Keywords

Nanowires
Photodetectors (PDs)
SiC
ZnO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2011.2164570

Cite this

@article{050e4d810d5444c4aa9a20b67954748d,

title = "Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection",

abstract = "This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25°C and from 4.9 to 7.6 at 200°C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.",

keywords = "Nanowires, Photodetectors (PDs), SiC, ZnO",

author = "Lien, {Wei Cheng} and Tsai, {Dung Sheng} and Chiu, {Shu Hsien} and Senesky, {Debbie G.} and Roya Maboudian and Pisano, {Albert P.} and He, {Jr Hau}",

note = "Funding Information: Manuscript received July 17, 2011; revised July 27, 2011; accepted August 2, 2011. Date of publication September 18, 2011; date of current version October 26, 2011. The research was supported by the National Science Council 99–2120-M-007–012, 99-2112-M-002–024-MY3 and 99-2622-E-002-019-CC3. W.-C. Lien and D.-S. Tsai contributed equally to this work. The review of this letter was arranged by Editor P. K.-L. Yu.",

year = "2011",

month = nov,

doi = "10.1109/LED.2011.2164570",

language = "English (US)",

volume = "32",

pages = "1564--1566",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection

AU - Lien, Wei Cheng

AU - Tsai, Dung Sheng

AU - Chiu, Shu Hsien

AU - Senesky, Debbie G.

AU - Maboudian, Roya

AU - Pisano, Albert P.

AU - He, Jr Hau

N1 - Funding Information: Manuscript received July 17, 2011; revised July 27, 2011; accepted August 2, 2011. Date of publication September 18, 2011; date of current version October 26, 2011. The research was supported by the National Science Council 99–2120-M-007–012, 99-2112-M-002–024-MY3 and 99-2622-E-002-019-CC3. W.-C. Lien and D.-S. Tsai contributed equally to this work. The review of this letter was arranged by Editor P. K.-L. Yu.

PY - 2011/11

Y1 - 2011/11

N2 - This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25°C and from 4.9 to 7.6 at 200°C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.

AB - This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25°C and from 4.9 to 7.6 at 200°C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.

KW - Nanowires

KW - Photodetectors (PDs)

KW - SiC

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=80054967567&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2164570

DO - 10.1109/LED.2011.2164570

M3 - Article

AN - SCOPUS:80054967567

SN - 0741-3106

VL - 32

SP - 1564

EP - 1566

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 6022746

ER -

Low-temperature, ion beam-assisted SiC thin films with antireflective ZnO nanorod arrays for high-temperature photodetection

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this