Abstract
This work demonstrates high-temperature operation of metal-semiconductor- metal photodetectors (MSM PDs) using low-temperature, ion beam-assisted deposition of nanocrystalline SiC thin films and hydrothermal synthesis of ZnO nanorod arrays (NRAs). Due to the incorporation of ZnO NRAs, the photo-to-dark current ratio of SiC MSM PDs is increased from 4.9 to 13.3 at 25°C and from 4.9 to 7.6 at 200°C. The enhancement in the sensitivity suggests that the ZnO NRAs could serve as an effective antireflective layer to guide more light into the SiC MSM PDs. This was confirmed through the characterization of reflectance measurements and finite-difference time-domain analysis. These results support the integration of nanocrystalline SiC thin films and ZnO NRAs for use in high-temperature photodetection applications.
Original language | English (US) |
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Article number | 6022746 |
Pages (from-to) | 1564-1566 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 11 |
DOIs | |
State | Published - Nov 2011 |
Bibliographical note
Funding Information:Manuscript received July 17, 2011; revised July 27, 2011; accepted August 2, 2011. Date of publication September 18, 2011; date of current version October 26, 2011. The research was supported by the National Science Council 99–2120-M-007–012, 99-2112-M-002–024-MY3 and 99-2622-E-002-019-CC3. W.-C. Lien and D.-S. Tsai contributed equally to this work. The review of this letter was arranged by Editor P. K.-L. Yu.
Keywords
- Nanowires
- Photodetectors (PDs)
- SiC
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering