Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy

X. M. Cai; A. B. Djurišić; M. H. Xie; H. Liu; X. X. Zhang

doi:10.1109/COMMAD.2004.1577489

Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy

X. M. Cai, A. B. Djurišić, M. H. Xie, H. Liu, X. X. Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

GaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed.

Original language	English (US)
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	49-52
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577489
State	Published - 2005
Externally published	Yes
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: Dec 8 2004 → Dec 10 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	12/8/04 → 12/10/04

Keywords

Curie temperature
Ferromagnetism
GaMnN

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2004.1577489

Cite this

Cai, X. M., Djurišić, A. B., Xie, M. H., Liu, H., & Zhang, X. X. (2005). Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 49-52). Article 1577489 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577489

@inproceedings{1b253a314c0e414fa22c219068a2ab48,

title = "Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy",

abstract = "GaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed.",

keywords = "Curie temperature, Ferromagnetism, GaMnN",

author = "Cai, {X. M.} and Djuri{\v s}i{\'c}, {A. B.} and Xie, {M. H.} and H. Liu and Zhang, {X. X.}",

year = "2005",

doi = "10.1109/COMMAD.2004.1577489",

language = "English (US)",

isbn = "0780388208",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "49--52",

booktitle = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings",

note = "COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices ; Conference date: 08-12-2004 Through 10-12-2004",

}

Cai, XM, Djurišić, AB, Xie, MH, Liu, H & Zhang, XX 2005, Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577489, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 49-52, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 12/8/04. https://doi.org/10.1109/COMMAD.2004.1577489

Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy. / Cai, X. M.; Djurišić, A. B.; Xie, M. H. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 49-52 1577489 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy

AU - Cai, X. M.

AU - Djurišić, A. B.

AU - Xie, M. H.

AU - Liu, H.

AU - Zhang, X. X.

PY - 2005

Y1 - 2005

N2 - GaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed.

AB - GaMnN films with ∼3 at. % Mn were grown on 6H SiC (0001) by plasma-assisted molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), photoluminescence (PL), and superconducting quantum interference device (SQUID). The samples exhibited ferromagnetic properties at low temperature. The highest obtained Curie temperature Tc was 56K. The origin of the ferromagnetic properties was discussed.

KW - Curie temperature

KW - Ferromagnetism

KW - GaMnN

UR - http://www.scopus.com/inward/record.url?scp=46149098451&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2004.1577489

DO - 10.1109/COMMAD.2004.1577489

M3 - Conference contribution

AN - SCOPUS:46149098451

SN - 0780388208

SN - 9780780388208

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 49

EP - 52

BT - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings

T2 - COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices

Y2 - 8 December 2004 through 10 December 2004

ER -

Cai XM, Djurišić AB, Xie MH, Liu H, Zhang XX. Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 49-52. 1577489. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577489

Low temperature ferromagnetism of GaMnN grown on 6H-SiC (0001) by molecular beam epitaxy

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