Low temperature CVD route to binary and ternary diffusion barrier nitrides for Cu metallization

Alain E. Kaloyeros*, Jean Kelsey, Cindy Goldberg, Dalaver Anjum, Xiaomeng Chen, Jawid Mirza, Kaushik Kumar, Barry Arkles, Bin Han, John J. Sullivan

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


The identification of viable diffusion barrier/adhesion promoter material and associated deposition processes is a critical factor in the successful development of structurally and electrically reliable copper based metallization schemes. As feature sizes continue shrinking, such materials are expected to delivery enhanced performance at increasingly thinner layers to allow maximum space utilization by the actual conductor. In this respect, Ta and W based binary and ternary nitrides present promising solutions in view of their hardness, chemical inertness, and thermal stability to high temperatures. Additionally, their availability in amorphous form provides the added benefit of inherent absence of grain boundaries, which usually serve as a primary diffusion path. This paper presents finds from the development of low0temperature (,350°C) CVD processes for the growth of ultrathin Ta, W, Ta-Si, and W-Sinitride layers for sub-0.18 micron device structures. These processes employ novel inorganic and metal-organic source precursors which allow for the in-situ, one-step, growth of binary and ternary nitrides from appropriate mixtures of the corresponding source precursors. Results will also be discussed from diffusion barrier studies which established performance metris for the applicability of such materials in copper interconnect technologies.

Original languageEnglish (US)
Pages (from-to)499
Number of pages1
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 16 1998

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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