Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

Julio C. Costa; Arash Pouryazdan; Julianna Panidi; Thomas D. Anthopoulos; Maciej O. Liedke; Christof Schneider; Andreas Wagner; Niko Munzenrieder

doi:10.1109/ESSDERC.2018.8486889

Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

Julio C. Costa, Arash Pouryazdan, Julianna Panidi, Thomas D. Anthopoulos, Maciej O. Liedke, Christof Schneider, Andreas Wagner, Niko Munzenrieder

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.

Original language	English (US)
Title of host publication	2018 48th European Solid-State Device Research Conference (ESSDERC)
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Pages	98-101
Number of pages	4
ISBN (Print)	9781538654019
DOIs	https://doi.org/10.1109/ESSDERC.2018.8486889
State	Published - Oct 18 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)

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10.1109/ESSDERC.2018.8486889

https://repository.kaust.edu.sa/bitstream/10754/630217/1/ILTR%20SpC%20Final.pdf

Cite this

Costa, J. C., Pouryazdan, A., Panidi, J., Anthopoulos, T. D., Liedke, M. O., Schneider, C., Wagner, A., & Munzenrieder, N. (2018). Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications. In 2018 48th European Solid-State Device Research Conference (ESSDERC) (pp. 98-101). Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/ESSDERC.2018.8486889

@inproceedings{8d87495749af4f459c30cadaf69adf57,

title = "Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications",

abstract = "In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.",

author = "Costa, {Julio C.} and Arash Pouryazdan and Julianna Panidi and Anthopoulos, {Thomas D.} and Liedke, {Maciej O.} and Christof Schneider and Andreas Wagner and Niko Munzenrieder",

note = "KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)",

year = "2018",

month = oct,

day = "18",

doi = "10.1109/ESSDERC.2018.8486889",

language = "English (US)",

isbn = "9781538654019",

pages = "98--101",

booktitle = "2018 48th European Solid-State Device Research Conference (ESSDERC)",

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Costa, JC, Pouryazdan, A, Panidi, J, Anthopoulos, TD, Liedke, MO, Schneider, C, Wagner, A & Munzenrieder, N 2018, Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications. in 2018 48th European Solid-State Device Research Conference (ESSDERC). Institute of Electrical and Electronics Engineers (IEEE), pp. 98-101. https://doi.org/10.1109/ESSDERC.2018.8486889

Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications. / Costa, Julio C.; Pouryazdan, Arash; Panidi, Julianna et al.
2018 48th European Solid-State Device Research Conference (ESSDERC). Institute of Electrical and Electronics Engineers (IEEE), 2018. p. 98-101.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

AU - Costa, Julio C.

AU - Pouryazdan, Arash

AU - Panidi, Julianna

AU - Anthopoulos, Thomas D.

AU - Liedke, Maciej O.

AU - Schneider, Christof

AU - Wagner, Andreas

AU - Munzenrieder, Niko

N1 - KAUST Repository Item: Exported on 2020-10-01 Acknowledgements: This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)

PY - 2018/10/18

Y1 - 2018/10/18

N2 - In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.

AB - In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.

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UR - https://ieeexplore.ieee.org/document/8486889

UR - http://www.scopus.com/inward/record.url?scp=85056421156&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2018.8486889

DO - 10.1109/ESSDERC.2018.8486889

M3 - Conference contribution

SN - 9781538654019

SP - 98

EP - 101

BT - 2018 48th European Solid-State Device Research Conference (ESSDERC)

PB - Institute of Electrical and Electronics Engineers (IEEE)

ER -

Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

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