Low Temperature and Radiation Stability of Flexible IGZO TFTs and their Suitability for Space Applications

Julio C. Costa, Arash Pouryazdan, Julianna Panidi, Thomas D. Anthopoulos, Maciej O. Liedke, Christof Schneider, Andreas Wagner, Niko Munzenrieder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


In this paper, Low Earth Orbit radiation and temperature conditions are mimicked to investigate the suitability of flexible Indium-Gallium-Zinc-Oxide transistors for lightweight space-wearables. Such wearable devices could be incorporated into spacesuits as unobtrusive sensors such as radiation detectors or physiological monitors. Due to the harsh environment to which these space-wearables would be exposed, they have to be able to withstand high radiation doses and low temperatures. For this reason, the impacts of high energetic electron irradiation with fluences up to 10 e/cm and low operating temperatures down to 78 K, are investigated. This simulates 278 h in a Low Earth Orbit. The threshold voltage and mobility of transistors that were exposed to e-irradiation are found to shift by +0.09 0.05 V and-0.6 0.5 cmVs. Subsequent low temperature exposure resulted in additional shifts of +0.38V and-5.95 cmVs for the same parameters. These values are larger than the ones obtained from non-irradiated reference samples. If this is considered during the systems' design, these devices can be used to unobtrusively integrate sensor systems into space-suits.
Original languageEnglish (US)
Title of host publication2018 48th European Solid-State Device Research Conference (ESSDERC)
PublisherInstitute of Electrical and Electronics Engineers (IEEE)
Number of pages4
ISBN (Print)9781538654019
StatePublished - Oct 18 2018

Bibliographical note

KAUST Repository Item: Exported on 2020-10-01
Acknowledgements: This work was partially supported by EPSRC, GCRF, and NIHR, under the contact number: EP/R013837/1 (SmartSensOtics)


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