Low switching current flux-closed magnetoresistive random access memory

Y. K. Zheng; Y. H. Wu; K. B. Li; J. J. Qiu; Y. T. Shen; L. H. An; Z. B. Guo; G. C. Han; P. Luo; D. You; Z. Y. Liu

doi:10.1063/1.1557372

Low switching current flux-closed magnetoresistive random access memory

Y. K. Zheng^*, Y. H. Wu, K. B. Li, J. J. Qiu, Y. T. Shen, L. H. An, Z. B. Guo, G. C. Han, P. Luo, D. You, Z. Y. Liu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.

Original language	English (US)
Pages (from-to)	7307-7309
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 2
DOIs	https://doi.org/10.1063/1.1557372
State	Published - May 15 2003
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.1557372

Cite this

@article{9f9cf075507f49f49763e1c29d40f5fe,

title = "Low switching current flux-closed magnetoresistive random access memory",

abstract = "Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.",

author = "Zheng, {Y. K.} and Wu, {Y. H.} and Li, {K. B.} and Qiu, {J. J.} and Shen, {Y. T.} and An, {L. H.} and Guo, {Z. B.} and Han, {G. C.} and P. Luo and D. You and Liu, {Z. Y.}",

year = "2003",

month = may,

day = "15",

doi = "10.1063/1.1557372",

language = "English (US)",

volume = "93",

pages = "7307--7309",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "AIP Publishing",

number = "10 2",

}

TY - JOUR

T1 - Low switching current flux-closed magnetoresistive random access memory

AU - Zheng, Y. K.

AU - Wu, Y. H.

AU - Li, K. B.

AU - Qiu, J. J.

AU - Shen, Y. T.

AU - An, L. H.

AU - Guo, Z. B.

AU - Han, G. C.

AU - Luo, P.

AU - You, D.

AU - Liu, Z. Y.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.

AB - Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.

UR - http://www.scopus.com/inward/record.url?scp=0038313037&partnerID=8YFLogxK

U2 - 10.1063/1.1557372

DO - 10.1063/1.1557372

M3 - Article

AN - SCOPUS:0038313037

SN - 0021-8979

VL - 93

SP - 7307

EP - 7309

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 2

ER -

Low switching current flux-closed magnetoresistive random access memory

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this