Low switching current flux-closed magnetoresistive random access memory was analyzed. It was found that the switching field increases under the uniform external field, and the switching field has no change under the bit current field. Results showed that the bit current of 10 mA was sufficient to switch the 1 μm×4 μm cell.
|Original language||English (US)|
|Number of pages||3|
|Journal||Journal of Applied Physics|
|Issue number||10 2|
|State||Published - May 15 2003|
ASJC Scopus subject areas
- Physics and Astronomy(all)