LOW-RESISTIVITY Cl-DOPED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

K. Ohkawa; T. Mitsuyu; O. Yamazaki

doi:10.7567/ssdm.1986.c-11-1

LOW-RESISTIVITY Cl-DOPED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

K. Ohkawa^*, T. Mitsuyu, O. Yamazaki

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

Chlorine-doped ZnSe on (100)GaAs has been grown by molecular Beam epitaxy. The Cl-doped ZnSe layer exhibited extremely low resistivity and high carrier concentration compared with Ga-doped ZnSe. Strong blue near-band-gap photoluminescence at room temperature was observed for an appropriate doping level. It was found by SIMS analysis that the diffusion of Cl atoms in the ZnSe layer during growth was negligible.

Original language	English (US)
Title of host publication	Conference on Solid State Devices and Materials
Publisher	Business Cent for Academic Soc Japan
Pages	635-638
Number of pages	4
ISBN (Print)	493081314X, 9784930813145
DOIs	https://doi.org/10.7567/ssdm.1986.c-11-1
State	Published - 1986
Externally published	Yes

Publication series

Name	Conference on Solid State Devices and Materials

ASJC Scopus subject areas

General Engineering

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10.7567/ssdm.1986.c-11-1

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title = "LOW-RESISTIVITY Cl-DOPED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY.",

abstract = "Chlorine-doped ZnSe on (100)GaAs has been grown by molecular Beam epitaxy. The Cl-doped ZnSe layer exhibited extremely low resistivity and high carrier concentration compared with Ga-doped ZnSe. Strong blue near-band-gap photoluminescence at room temperature was observed for an appropriate doping level. It was found by SIMS analysis that the diffusion of Cl atoms in the ZnSe layer during growth was negligible.",

author = "K. Ohkawa and T. Mitsuyu and O. Yamazaki",

year = "1986",

doi = "10.7567/ssdm.1986.c-11-1",

language = "English (US)",

isbn = "493081314X",

series = "Conference on Solid State Devices and Materials",

publisher = "Business Cent for Academic Soc Japan",

pages = "635--638",

booktitle = "Conference on Solid State Devices and Materials",

}

TY - GEN

T1 - LOW-RESISTIVITY Cl-DOPED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

AU - Ohkawa, K.

AU - Mitsuyu, T.

AU - Yamazaki, O.

PY - 1986

Y1 - 1986

N2 - Chlorine-doped ZnSe on (100)GaAs has been grown by molecular Beam epitaxy. The Cl-doped ZnSe layer exhibited extremely low resistivity and high carrier concentration compared with Ga-doped ZnSe. Strong blue near-band-gap photoluminescence at room temperature was observed for an appropriate doping level. It was found by SIMS analysis that the diffusion of Cl atoms in the ZnSe layer during growth was negligible.

AB - Chlorine-doped ZnSe on (100)GaAs has been grown by molecular Beam epitaxy. The Cl-doped ZnSe layer exhibited extremely low resistivity and high carrier concentration compared with Ga-doped ZnSe. Strong blue near-band-gap photoluminescence at room temperature was observed for an appropriate doping level. It was found by SIMS analysis that the diffusion of Cl atoms in the ZnSe layer during growth was negligible.

UR - http://www.scopus.com/inward/record.url?scp=0022880088&partnerID=8YFLogxK

U2 - 10.7567/ssdm.1986.c-11-1

DO - 10.7567/ssdm.1986.c-11-1

M3 - Conference contribution

AN - SCOPUS:0022880088

SN - 493081314X

SN - 9784930813145

T3 - Conference on Solid State Devices and Materials

SP - 635

EP - 638

BT - Conference on Solid State Devices and Materials

PB - Business Cent for Academic Soc Japan

ER -

LOW-RESISTIVITY Cl-DOPED ZnSe LAYERS GROWN BY MOLECULAR BEAM EPITAXY.

Abstract

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