Low-power and Field-free Perpendicular Magnetic Memory Driven by Topological Insulators.

Baoshan Cui, Aitian Chen, Xu Zhang, Bin Fang, Zhaozhuo Zeng, Peng Zhang, Jing Zhang, Wenqing He, Guoqiang Yu, Peng Yan, Xiufeng Han, Kang L Wang, Xixiang Zhang, Hao Wu

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for the low-power SOT-driven magnetic random-access memory (SOT-MRAM). Here, we demonstrate the functional 3-terminal SOT-MRAM device by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. The ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI-pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (> 10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.
Original languageEnglish (US)
JournalAdvanced materials (Deerfield Beach, Fla.)
StatePublished - May 4 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-05-20
Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081
Acknowledgements: This work was supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402801and 2022YFA1402802), the National Natural Science Foundation of China (NSFC, Grant Nos. 52271239, 12074057,12204089,12134017, and 52161160334), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2022B1515120058,2022A1515110648, and 2020A1515110553), and the start-up funding from Songshan Lake Materials Laboratory (Y1D1071S511).Thework at UCLA was supportedby the U.S. Army Research Office MURI program under Grant Nos.W911NF-16-1-0472 and W911NF-20-2-0166.The work at King AbdullahUniversity of Science and Technology (KAUST) was supported by KAUST Office of Sponsored Research (OSR) under award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665

ASJC Scopus subject areas

  • Mechanics of Materials
  • General Materials Science
  • Mechanical Engineering


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