Low-power and Field-free Perpendicular Magnetic Memory Driven by Topological Insulators.

Baoshan Cui; Aitian Chen; Xu Zhang; Bin Fang; Zhaozhuo Zeng; Peng Zhang; Jing Zhang; Wenqing He; Guoqiang Yu; Peng Yan; Xiufeng Han; Kang L Wang; Xixiang Zhang; Hao Wu

doi:10.1002/adma.202302350

Low-power and Field-free Perpendicular Magnetic Memory Driven by Topological Insulators.

Baoshan Cui, Aitian Chen, Xu Zhang, Bin Fang, Zhaozhuo Zeng, Peng Zhang, Jing Zhang, Wenqing He, Guoqiang Yu, Peng Yan, Xiufeng Han, Kang L Wang, Xixiang Zhang, Hao Wu

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for the low-power SOT-driven magnetic random-access memory (SOT-MRAM). Here, we demonstrate the functional 3-terminal SOT-MRAM device by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. The ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI-pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (> 10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.

Original language	English (US)
Journal	Advanced materials (Deerfield Beach, Fla.)
DOIs	https://doi.org/10.1002/adma.202302350
State	Published - May 4 2023

Bibliographical note

KAUST Repository Item: Exported on 2023-05-20
Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081
Acknowledgements: This work was supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402801and 2022YFA1402802), the National Natural Science Foundation of China (NSFC, Grant Nos. 52271239, 12074057,12204089,12134017, and 52161160334), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2022B1515120058,2022A1515110648, and 2020A1515110553), and the start-up funding from Songshan Lake Materials Laboratory (Y1D1071S511).Thework at UCLA was supportedby the U.S. Army Research Office MURI program under Grant Nos.W911NF-16-1-0472 and W911NF-20-2-0166.The work at King AbdullahUniversity of Science and Technology (KAUST) was supported by KAUST Office of Sponsored Research (OSR) under award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665

ASJC Scopus subject areas

Mechanics of Materials
General Materials Science
Mechanical Engineering

Access to Document

10.1002/adma.202302350

https://repository.kaust.edu.sa/bitstream/10754/691282/1/Revised%20Manuscript-TI-pMTJ.pdf

Cite this

@article{2de42cdfb21244ed9185e144e3888e53,

title = "Low-power and Field-free Perpendicular Magnetic Memory Driven by Topological Insulators.",

abstract = "Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for the low-power SOT-driven magnetic random-access memory (SOT-MRAM). Here, we demonstrate the functional 3-terminal SOT-MRAM device by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. The ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI-pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (> 10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.",

author = "Baoshan Cui and Aitian Chen and Xu Zhang and Bin Fang and Zhaozhuo Zeng and Peng Zhang and Jing Zhang and Wenqing He and Guoqiang Yu and Peng Yan and Xiufeng Han and Wang, {Kang L} and Xixiang Zhang and Hao Wu",

note = "KAUST Repository Item: Exported on 2023-05-20 Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081 Acknowledgements: This work was supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402801and 2022YFA1402802), the National Natural Science Foundation of China (NSFC, Grant Nos. 52271239, 12074057,12204089,12134017, and 52161160334), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2022B1515120058,2022A1515110648, and 2020A1515110553), and the start-up funding from Songshan Lake Materials Laboratory (Y1D1071S511).Thework at UCLA was supportedby the U.S. Army Research Office MURI program under Grant Nos.W911NF-16-1-0472 and W911NF-20-2-0166.The work at King AbdullahUniversity of Science and Technology (KAUST) was supported by KAUST Office of Sponsored Research (OSR) under award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665",

year = "2023",

month = may,

day = "4",

doi = "10.1002/adma.202302350",

language = "English (US)",

journal = "Advanced materials (Deerfield Beach, Fla.)",

issn = "0935-9648",

publisher = "WILEY-V C H VERLAG GMBH",

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TY - JOUR

T1 - Low-power and Field-free Perpendicular Magnetic Memory Driven by Topological Insulators.

AU - Cui, Baoshan

AU - Chen, Aitian

AU - Zhang, Xu

AU - Fang, Bin

AU - Zeng, Zhaozhuo

AU - Zhang, Peng

AU - Zhang, Jing

AU - He, Wenqing

AU - Yu, Guoqiang

AU - Yan, Peng

AU - Han, Xiufeng

AU - Wang, Kang L

AU - Zhang, Xixiang

AU - Wu, Hao

N1 - KAUST Repository Item: Exported on 2023-05-20 Acknowledged KAUST grant number(s): ORA-CRG10-2021-4665, ORA-CRG8-2019-4081 Acknowledgements: This work was supported by the National Key Research and Development Program of China (Grant Nos. 2022YFA1402801and 2022YFA1402802), the National Natural Science Foundation of China (NSFC, Grant Nos. 52271239, 12074057,12204089,12134017, and 52161160334), the Guangdong Basic and Applied Basic Research Foundation (Grant Nos. 2022B1515120058,2022A1515110648, and 2020A1515110553), and the start-up funding from Songshan Lake Materials Laboratory (Y1D1071S511).Thework at UCLA was supportedby the U.S. Army Research Office MURI program under Grant Nos.W911NF-16-1-0472 and W911NF-20-2-0166.The work at King AbdullahUniversity of Science and Technology (KAUST) was supported by KAUST Office of Sponsored Research (OSR) under award Nos. ORA-CRG8-2019-4081 and ORA-CRG10-2021-4665

PY - 2023/5/4

Y1 - 2023/5/4

N2 - Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for the low-power SOT-driven magnetic random-access memory (SOT-MRAM). Here, we demonstrate the functional 3-terminal SOT-MRAM device by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. The ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI-pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (> 10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.

AB - Giant spin-orbit torque (SOT) from topological insulators (TIs) has great potential for the low-power SOT-driven magnetic random-access memory (SOT-MRAM). Here, we demonstrate the functional 3-terminal SOT-MRAM device by integrating the TI [(BiSb)2Te3] with perpendicular magnetic tunnel junctions (pMTJs), where the tunneling magnetoresistance is employed for the effective reading method. The ultralow switching current density of 1.5 × 105 A cm−2 is achieved in the TI-pMTJ device at room temperature, which is 1–2 orders of magnitude lower than that in conventional heavy metals-based systems, due to the high SOT efficiency θSH = 1.16 of (BiSb)2Te3. Furthermore, all-electrical field-free writing is realized by the synergistic effect of a small spin-transfer torque current during the SOT. The thermal stability factor (Δ = 66) shows the high retention time (> 10 years) of the TI-pMTJ device. This work sheds light to the future low-power, high-density, and high-endurance/retention magnetic memory technology based on quantum materials.

UR - http://hdl.handle.net/10754/691282

UR - https://onlinelibrary.wiley.com/doi/10.1002/adma.202302350

U2 - 10.1002/adma.202302350

DO - 10.1002/adma.202302350

M3 - Article

C2 - 37141542

SN - 0935-9648

JO - Advanced materials (Deerfield Beach, Fla.)

JF - Advanced materials (Deerfield Beach, Fla.)

ER -

Low-power and Field-free Perpendicular Magnetic Memory Driven by Topological Insulators.

Abstract

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