Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics

Yi Jen Huang; I. Chung Shih; Shih Chun Chao; Cheng Yen Wen; Jr Hau He; Si Chen Lee

doi:10.1109/INEC.2014.7460426

Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO_x films and its resistive switching characteristics

Yi Jen Huang, I. Chung Shih, Shih Chun Chao, Cheng Yen Wen, Jr Hau He, Si Chen Lee

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiO_x storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiO_x/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (∼80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiO_x interface. Our devices demonstrated the great potential for future transparent electronic applications.

Original language	English (US)
Title of host publication	2014 IEEE International Nanoelectronics Conference, INEC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479950379
DOIs	https://doi.org/10.1109/INEC.2014.7460426
State	Published - Apr 26 2016
Event	IEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan Duration: Jul 28 2014 → Jul 31 2014

Publication series

Name	2014 IEEE International Nanoelectronics Conference, INEC 2014

Conference

Conference	IEEE International Nanoelectronics Conference, INEC 2014
Country/Territory	Japan
City	Sapporo
Period	07/28/14 → 07/31/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

Keywords

ALD
T-RRAM
a-TiO

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2014.7460426

Cite this

Huang, Y. J., Shih, I. C., Chao, S. C., Wen, C. Y., He, J. H., & Lee, S. C. (2016). Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO_x films and its resistive switching characteristics. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 Article 7460426 (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460426

Huang, Yi Jen ; Shih, I. Chung ; Chao, Shih Chun et al. / Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO_x films and its resistive switching characteristics. 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. (2014 IEEE International Nanoelectronics Conference, INEC 2014).

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title = "Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiOx films and its resistive switching characteristics",

abstract = "A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (∼80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.",

keywords = "ALD, T-RRAM, a-TiO",

author = "Huang, {Yi Jen} and Shih, {I. Chung} and Chao, {Shih Chun} and Wen, {Cheng Yen} and He, {Jr Hau} and Lee, {Si Chen}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; IEEE International Nanoelectronics Conference, INEC 2014 ; Conference date: 28-07-2014 Through 31-07-2014",

year = "2016",

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day = "26",

doi = "10.1109/INEC.2014.7460426",

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Huang, YJ, Shih, IC, Chao, SC, Wen, CY, He, JH & Lee, SC 2016, Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO_x films and its resistive switching characteristics. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460426, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 07/28/14. https://doi.org/10.1109/INEC.2014.7460426

Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO_x films and its resistive switching characteristics. / Huang, Yi Jen; Shih, I. Chung; Chao, Shih Chun et al.
2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460426 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Wen, Cheng Yen

AU - He, Jr Hau

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N2 - A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (∼80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.

AB - A fully transparent resistive random access memory (T-RRAM) device based on an ultrathin a-TiOx storage layer sandwiched between the top ITO and bottom FTO electrodes (ITO/a-TiOx/FTO) was fabricated on the glass substrate. The memory device exhibited not only good optical transmittance (∼80%) but also a bipolar resistive switching characteristic with low operation voltage (-0.5V/+1V), low operation current (500μA), high ROFF/RON ratio (>100), reasonable endurance (>102 cycles), and retention characteristics (104 s). The resistive switching mechanism could be explained by the formation and rupture of the oxygen vacancies induced conductive filament near ITO and a-TiOx interface. Our devices demonstrated the great potential for future transparent electronic applications.

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Huang YJ, Shih IC, Chao SC, Wen CY, He JH, Lee SC. Low operation voltage transparent resistive random access memory (T-RRAM) based on ultrathin a-TiO_x films and its resistive switching characteristics. In 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc. 2016. 7460426. (2014 IEEE International Nanoelectronics Conference, INEC 2014). doi: 10.1109/INEC.2014.7460426