TY - PAT
T1 - Low-noise Magnetic Sensors
AU - Kosel, Jürgen
AU - Sun, Jian
N1 - KAUST Repository Item: Exported on 2019-02-13
PY - 2014/3/27
Y1 - 2014/3/27
N2 - Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
AB - Magnetic sensors are disclosed, as well as methods for fabricating and using the same. In some embodiments, an EMR effect sensor includes a semiconductor layer. In some embodiments, the EMR effect sensor may include a conductive layer substantially coupled to the semiconductor layer. In some embodiments, the EMR effect sensor may include a voltage lead coupled to the conductive layer. In some embodiments, the voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. In some embodiments, the EMR effect sensor may include a second voltage lead coupled to the semiconductor layer. In some embodiments, the second voltage lead may be configured to provide a voltage for measurement by a voltage measurement circuit. Embodiments of a Hall effect sensor having the same or similar structure are also disclosed.
UR - http://hdl.handle.net/10754/595006
UR - http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220140084913%22.PGNR.&OS=DN/20140084913&RS=DN/20140084913
UR - http://assignment.uspto.gov/#/search?adv=publNum:20140084913
UR - http://www.google.com/patents/US20140084913
UR - http://worldwide.espacenet.com/publicationDetails/biblio?CC=US&NR=2014084913A1&KC=A1&FT=D
M3 - Patent
M1 - US 20140084913 A1
ER -