We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.
|Original language||English (US)|
|Journal||SEMICONDUCTOR SCIENCE AND TECHNOLOGY|
|State||Published - 2015|
Bibliographical noteKAUST Repository Item: Exported on 2021-11-04
Acknowledged KAUST grant number(s): KACST-KAUST-UCSB Solid State Lighting Program (SSLP)
Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was completed in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.
ASJC Scopus subject areas
- Materials Chemistry
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Condensed Matter Physics