Low damage dry etch for III-nitride light emitters

Joseph G. Nedy; Nathan G. Young; Kathryn M. Kelchner; Yanling Hu; Robert M. Farrell; Shuji Nakamura; Steven P. DenBaars; Claude Weisbuch; James S. Speck

doi:10.1088/0268-1242/30/8/085019

Low damage dry etch for III-nitride light emitters

Joseph G. Nedy, Nathan G. Young, Kathryn M. Kelchner, Yanling Hu, Robert M. Farrell, Shuji Nakamura, Steven P. DenBaars, Claude Weisbuch, James S. Speck

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

Original language	English (US)
Pages (from-to)	085019
Journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume	30
Issue number	8
DOIs	https://doi.org/10.1088/0268-1242/30/8/085019
State	Published - 2015
Externally published	Yes

Bibliographical note

KAUST Repository Item: Exported on 2021-11-04
Acknowledged KAUST grant number(s): KACST-KAUST-UCSB Solid State Lighting Program (SSLP)
Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was completed in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053).
This publication acknowledges KAUST support, but has no KAUST affiliated authors.

ASJC Scopus subject areas

Materials Chemistry
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering
Condensed Matter Physics

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10.1088/0268-1242/30/8/085019

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@article{bb098a74f8024396bf40454e28e3292a,

title = "Low damage dry etch for III-nitride light emitters",

abstract = "We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.",

author = "Nedy, {Joseph G.} and Young, {Nathan G.} and Kelchner, {Kathryn M.} and Yanling Hu and Farrell, {Robert M.} and Shuji Nakamura and DenBaars, {Steven P.} and Claude Weisbuch and Speck, {James S.}",

note = "KAUST Repository Item: Exported on 2021-11-04 Acknowledged KAUST grant number(s): KACST-KAUST-UCSB Solid State Lighting Program (SSLP) Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was completed in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.",

year = "2015",

doi = "10.1088/0268-1242/30/8/085019",

language = "English (US)",

volume = "30",

pages = "085019",

journal = "SEMICONDUCTOR SCIENCE AND TECHNOLOGY",

issn = "1361-6641",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Low damage dry etch for III-nitride light emitters

AU - Nedy, Joseph G.

AU - Young, Nathan G.

AU - Kelchner, Kathryn M.

AU - Hu, Yanling

AU - Farrell, Robert M.

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

AU - Weisbuch, Claude

AU - Speck, James S.

N1 - KAUST Repository Item: Exported on 2021-11-04 Acknowledged KAUST grant number(s): KACST-KAUST-UCSB Solid State Lighting Program (SSLP) Acknowledgements: This work was supported by the Solid State Lighting and Energy Center (SSLEC) at UCSB and the KACST-KAUST-UCSB Solid State Lighting Program (SSLP). A portion of this work was completed in the UCSB nanofabrication facility, part of the NSF NNIN network (ECS-0335765), as well as the UCSB Materials Research Laboratory (MRL), which is supported by the NSF MRSEC program (DMR-1121053). This publication acknowledges KAUST support, but has no KAUST affiliated authors.

PY - 2015

Y1 - 2015

N2 - We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

AB - We have developed a dry etch process for the fabrication of lithographically defined features close to light emitting layers in the III-nitride material system. The dry etch was tested for its effect on the internal quantum efficiency of c-plane InGaN quantum wells using the photoluminescence of a test structure with two active regions. No change was observed in the internal quantum efficiency of the test active region when the etched surface was greater than 71 nm away. To demonstrate the application of the developed dry etch process, surface-etched air gaps were fabricated 275 nm away from the active region of an m-plane InGaN/GaN laser diode and served as the waveguide upper cladding. Electrically injected lasing was observed without the need for regrowth or recovery anneals. This dry etch opens up a new design tool that can be utilized in the next generation of GaN light emitters.

UR - http://hdl.handle.net/10754/673077

UR - https://iopscience.iop.org/article/10.1088/0268-1242/30/8/085019

UR - http://www.scopus.com/inward/record.url?scp=84938703912&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/30/8/085019

DO - 10.1088/0268-1242/30/8/085019

M3 - Article

SN - 1361-6641

VL - 30

SP - 085019

JO - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

JF - SEMICONDUCTOR SCIENCE AND TECHNOLOGY

IS - 8

ER -

Low damage dry etch for III-nitride light emitters

Abstract

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